Datasheet > DMTH10H015LPS

DMTH10H015LPS

更新时间： 2023-12-06 20:11:14

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	745K
描述
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH10H015LPS 数据手册

DMTH10H015LPS

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

2,500

Carrier

Tape & Reel

DMTH10H015LPS-13

PowerDI5060-8

PowerDI5060-8/SWP (Type UX)

Note:

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

PowerDI5060-8/SWP (Type UX)

PowerDI5060-8

= Manufacturer’s Marking

TH1015LS = Product Type Marking Code

YYWW or ^—Y^—Y^—WW = Date Code Marking

TH1015LS

YY WW

TH1015LS

YY or ^—Y^—Y^—= Last Two Digits of Year (ex: 23 = 2023)

WW = Week Code (01 to 53)

———

Maximum Ratings (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_DSS

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Steady

State

Continuous Drain Current (Note 5) V_GS= 10V

Steady

State

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

Maximum Continuous Body Diode Forward Current (Note 5)

Avalanche Current (Note 7) L = 3mH

±20

V_GSS

T_A= +25°C

T_A= +70°C

T_C= +25°C

T_C= +100°C

I_D

I_DM

I_S

120

1.5

7.5

I_AS

E_AS

Avalanche Energy (Note 7) L = 3mH

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

Value

Unit

2.8

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation

°C/W

R_θJA

P_D

2.7

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

°C/W

°C

R_θJC

-55 to +175

T_J,T_STG

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

2 of 9

www.diodes.com

November 2023

DMTH10H015LPS

Document number: DS38713 Rev. 4 - 2

123 4 5 6 7...9

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