Datasheet > DMTH10H003SPSW

DMTH10H003SPSW

更新时间： 2023-12-06 20:11:38

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	708K
描述
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH10H003SPSW 数据手册

DMTH10H003SPSW

3.5

I_D= 1mA

V_GS= 6V, I_D= 25A

2.5

I_D= 250μA

1.5

V_GS= 10V, I_D= 30A

0.5

-50 -25

25 50 75 100 125 150 175

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

Figure 8. Gate Threshold Variation vs. Junction

Temperature

100000

10000

1000

100

f = 1MHz

V_GS= 0V

C_iss

C_oss

T_J= 150^oC

T_J= 125^oC

C_rss

T_J= 85^oC

T_J= 175^oC

T_J= 25^oC

T_J= -55^oC

0.3

0.6

0.9

1.2

1.5

10 20 30 40 50 60 70 80 90 100

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

1000

100

P_W= 1µs

R_DS(ON)

Limited

P_W= 10µs

P_W= 100µs

P_W= 1ms

T_J(Max)= 175℃

V_DS= 50V, I_D= 30A

P_W= 10ms

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

P_W= 100ms

V_GS= 10V

0.1

100

1000

10 20 30 40 50 60 70 80 90

Q_g(nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

4 of 7

www.diodes.com

November 2021

DMTH10H003SPSW

Document number: DS42033 Rev. 3 - 2

1 2 345 6 7

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