Datasheet > DMTH10H003SPSW

DMTH10H003SPSW

更新时间： 2023-12-06 20:11:38

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	708K
描述
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH10H003SPSW 数据手册

DMTH10H003SPSW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

100

±20

Gate-Source Voltage

V_GSS

T_C= +25C

Continuous Drain Current, V_GS= 10V (Note 6)

T_C= +100C

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 3mH

166

117

664

I_D

I_DM

I_S

166

664

20.2

612

I_SM

I_AS

E_AS

Avalanche Energy, L = 3mH

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

Value

2.6

Unit

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_JA

167

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

0.9

°C/W

°C

R_JC

-55 to +175

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

100

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 1mA

μA

V_DS= 80V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

—

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

2.6

2.2

3.4

0.8

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 30A

V_GS= 6V, I_D= 25A

V_GS= 0V, I_S= 20A

—

mΩ

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

1.2

—

5542

1681

—

C_iss

C_oss

C_rss

R_g

V_DS= 50V, V_GS= 0V,

f = 1MHz

Output Capacitance

Ω

Reverse Transfer Capacitance

Gate Resistance

1.46

85.0

21.0

19.7

16.0

23.2

45.3

29.6

71.7

163.1

V_DS= 0V, V_GS= 0V, f = 1MHz

V_DS= 50V, I_D= 30A, V_GS= 10V

Total Gate Charge

Q_g

Gate-Source Charge

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DD= 50V, V_GS= 10V,

Turn-Off Delay Time

t_D(OFF)

t_F

I_D= 30A, R_g= 3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_RR

I_F= 30A, di/dt = 100A/μs

Q_RR

Notes:

5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

November 2021

DMTH10H003SPSW

Document number: DS42033 Rev. 3 - 2

123 4 5 6 7

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