Datasheet > DMT6017LSS

DMT6017LSS

更新时间： 2023-12-06 20:10:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	541K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMT6017LSS 数据手册

DMT6017LSS

2.5

)

(

)

(

= 1mA

= 250µA

I ^S

1.5

= 85°C

= 150°C

= 25°C

= 125°C

)

(

V^G

= -55°C

0.5

-50 -25

75 100 125 150

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (C)

Figure 8 Diode Forward Voltage vs. Current

Figure 7 Gate Threshold Variation vs. Temperature

10000

1000

100

= 150°C

)

= 125°C

(

iss

1000

100

= 85°C

oss

rss

= 25°C

I ^D

f = 1MHz

0.1

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

100

DS(on)

Limited

)

(

= 30V

= 10A

= 10s

= 1s

= 100ms

= 10ms

I ^D0.1

= 1ms

= 150°C

J(max)

= 25°C

= 10V

= 100µs

Single Pulse

DUT on 1 * MRP Board

0.01

10 12 14 16 18

0.1

100

Q_g, TOTAL GATE CHARGE (nC)

Figure 11 Gate Charge

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

4 of 6

www.diodes.com

May 2016

DMT6017LSS

Document number: DS38852 Rev. 1 - 2

1 2 345 6

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