Datasheet > DMT6017LSS

DMT6017LSS

更新时间： 2023-12-06 20:10:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	541K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMT6017LSS 数据手册

DMT6017LSS

30.0

27.0

24.0

21.0

18.0

15.0

12.0

9.0

= 5.0V

= 10V

= 4.0V

= 4.5V

)

(

= 3.5V

I ^D

= 150°C

= 85°C

6.0

= 125°C

= 25°C

= 3.0V

3.0

= -55°C

0.0

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

0.03

0.025

0.02

0.015

0.01

0.005

0.025

0.02

)



(

= 10V

= 150°C

= 4.5V

= 125°C

= 85°C

0.015

0.01

= 10V

= 25°C

= -55°C

)

(

0.005

10 12 14 16 18 20

12 15 18 21 24 27 30

I_D, DRAIN CURRENT (A)

I_D, DRAIN-SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

1.6

1.4

1.2

0.04

0.035

0.03

0.025

0.02

0.015

0.01

0.005

= 10V

= 10A

= 4.5V

= 6A

= 4.5V

= 6A

= 10V

= 10A

0.8

0.6

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (C)

Figure 6 On-Resistance Variation with Temperature

Figure 5 On-Resistance Variation with Temperature

3 of 6

www.diodes.com

May 2016

DMT6017LSS

Document number: DS38852 Rev. 1 - 2

1 234 5 6

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