Datasheet > DMT6006SPS

DMT6006SPS

更新时间： 2023-12-06 20:10:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	803K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMT6006SPS 数据手册

DMT6006SPS

Marking Information

= Manufacturer’s Marking

T6006SS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Last Two Digits of Year (ex: 23 = 2023)

WW = Week Code (01 to 53)

T6006SS

YY WW

T6006SS

YY WW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

16.2

13.0

98.0

78.4

390

V_GSS

T_A= +25°C

T_A= +70°C

T_C= +25°C

T_C= +70°C

Continuous Drain Current (Note 5) V_GS= 10V

Continuous Drain Current (Note 6) V_GS= 10V

I_D

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 0.3mH

I_DM

I_S

390

24.2

87.9

I_SM

I_AS

E_AS

Avalanche Energy, L = 0.3mH

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

Value

2.45

Unit

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

89.3

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

1.4

°C/W

°C

R_θJC

-55 to +150

T_J, T_STG

Notes:

5. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

2 of 9

www.diodes.com

July 2023

DMT6006SPS

Document number: DS41013 Rev. 3 - 2

123 4 5 6 7...9

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