Datasheet > DMT2004UFDF-7

DMT2004UFDF-7

更新时间： 2024-11-25 19:21:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	500K
描述
Small Signal Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DMT2004UFDF-7 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	22 weeks	风险等级：	1.6
JESD-609代码：	e4	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

DMT2004UFDF-7 数据手册

DMT2004UFDF

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



0.6mm Profile – Ideal for Low Profile Applications

PCB Footprint of 4mm²

I_DMax

BV_DSS

R_DS(ON)Max

T_A= +25°C

Low Gate Threshold Voltage

6.0mΩ @ V_GS= 10V

7.2mΩ @ V_GS= 4.5V

12.5mΩ @ V_GS= 2.5V

14.1A

12.9A

9.8A

Fast Switching Speed

24V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data



Case: U-DFN2020-6 (Type F)

Case Material: Molded Plastic, ―Green‖ Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe. Solderable

Applications

per MIL-STD-202, Method 208



Battery Management Application

Power Management Functions

DC-DC Converters



Weight: 0.0065 grams (Approximate)

U-DFN2020-6 (Type F)

Pin Out

Bottom View

Top View

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMT2004UFDF-7

DMT2004UFDF-13

Case

Reel Size (inches)

Quantity per Reel

U-DFN2020-6 (Type F)

3,000

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

4M = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: D = 2016)

M = Month (ex: 9 = September)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

July 2016

DMT2004UFDF

Datasheet number: DS38790 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMT2004UFDF-7相关器件

型号	品牌	获取价格	描述	数据表
DMT2004UFG	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT2004UFG-13	DIODES	获取价格	Power Field-Effect Transistor,
DMT2004UFG-7	DIODES	获取价格	Power Field-Effect Transistor,
DMT2004UFV	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT2004UPS	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT2004UPS-13	DIODES	获取价格	Power Field-Effect Transistor,
DMT2005UDV	DIODES	获取价格	DUAL 24V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT2-134-4.8	COILCRAFT	获取价格	General Purpose Inductor, 134uH, 1 Element, 90, DIP-3
DMT2-134-4.8L	COILCRAFT	获取价格	Output Power Chokes â Toroid Styles
DMT2-149-3.8	COILCRAFT	获取价格	General Purpose Inductor, 149uH, 1 Element, 90, DIP-3

与DMT2004UFDF-7相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT2004UFDF-7

DMT2004UFDF-7 技术参数

DMT2004UFDF-7 数据手册

与DMT2004UFDF-7相关器件

与DMT2004UFDF-7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT2004UFDF-7

DMT2004UFDF-7 技术参数

DMT2004UFDF-7 数据手册

与DMT2004UFDF-7相关器件

与DMT2004UFDF-7相关文章

您还可以找

您在本页遇到什么问题？