Datasheet > DMS3016SSS-13

DMS3016SSS-13

更新时间： 2024-02-07 20:39:14

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
6页	160K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

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DMS3016SSS-13 数据手册

DMS3016SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

Mechanical Data

•

DIOFET utilizes a unique patented process to monolithically

integrate a MOSFET and a Schottky in a single die to deliver:

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Low R_DS(ON)- minimizes conduction losses

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Marking Information: See Page 5

Ordering Information: See Page 5

Weight: 0.072 grams (approximate)

•

Low V_SD- reducing the losses due to body diode conduction

Low Q_rr- lower Q_rrof the integrated Schottky reduces body

diode switching losses

•

Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shoot-

through or cross conduction currents at high frequencies

•

Avalanche rugged – I_ARand E_ARrated

•

Lead Free, RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

Top View

Internal Schematic

Top View

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±12

V_GSS

Steady

Continuous Drain Current (Note 3) V_GS= 4.5V

State

TA = 25°C

TA = 85°C

9.8

6.3

I_D

Pulsed Drain Current (Note 4)

I_DM

Avalanche Current (Note 4) (Note 5)

I_AR

Repetitive Avalanche Energy (Note 4) (Note 5) L = 0.3mH

25.4

E_AR

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Value

1.54

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I_ARand E_ARrating are based on low frequency and duty cycles to keep T_J= 25°C

1 of 6

www.diodes.com

September 2010

DMS3016SSS

Document number: DS32266 Rev. 3 - 2

12 3 4 5 6

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