Datasheet > DMS3014SFG_15

DMS3014SFG_15

更新时间： 2022-02-26 13:21:21

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描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDIÂ®

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数据手册

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DMS3014SFG_15 数据手册

DMS3014SFG

Marking Information

S29 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 11 = 2011)

WW = Week code (01 ~ 53)

S29

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±12

V_GSS

_A= 25°C

Steady

State

9.5

7.6

I_D

T_A= 70°C

Continuous Drain Current (Note 6) V_GS= 10V

T_A= 25°C

T_A= 70°C

T_A= 25°C

13.0

9.7

t<10s

Steady

State

9.0

7.4

T_A= 70°C

Continuous Drain Current (Note 6) V_GS= 4.5V

_A= 25°C

_A= 70°C

12.2

9.3

t<10s

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current (Note 7) L = 0.1mH

3.0

I_DM

I_S

I_AR

E_AR

Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Symbol

P_D

Value

Units

Total Power Dissipation (Note 5)

Steady state

131

2.1

7.1

°C/W

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

R_θ

t<10s

P_D

Steady state

t<10s

Thermal Resistance, Junction to Ambient (Note 6)

R_θ

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

R_θ

-55 to +150

°C

_J,T_STG

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I_ARand E_ARrating are based on low frequency and duty cycles to keep T_J= 25°C

POWERDI is a registered trademark of Diodes Incorporated

2 of 8

www.diodes.com

May 2012

DMS3014SFG

Document number: DS35594 Rev. 6 - 2

123 4 5 6 7 8

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