Datasheet > DMP3099LQ

DMP3099LQ

更新时间： 2023-12-06 20:10:55

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描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

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DMP3099LQ 数据手册

DMP3099LQ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Unit

Gate-Source Voltage

±20

V_GSS

Steady

State

T_A= +25°C

T_A= +70°C

-3.8

-2.9

Drain Current (Note 6) V_GS= -10V

Pulsed Drain Current (Note 7)

I_D

-11

I_DM

I_AS

E_AS

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 6)

Symbol

P_D

Value

1.08

Unit

115

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= +25°C (Note 6)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

-800

±100

V_DS= -30V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

—

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-1.0

—

-2.1

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= -250µA

V_GS= -10V, I_D= -3.8A

V_GS= -4.5V, I_D= -3.0A

V_DS= -5V, I_D= -2.7A

V_GS= 0V, I_S= -2.7A

Static Drain-Source On-Resistance

—

mΩ

Forward Transfer Admittance

Diode Forward Voltage

—

3.6

—

|Y_fs|

V_SD

—

-1.26

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

563

—

C_iss

C_oss

C_rss

R_G

V_DS= -25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

10.3

V_GS= 0V, V_DS= 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 9)

V_DS= -15V, V_GS= -4.5V,

I_D= -3.8A

—

5.2

—

Total Gate Charge

Q_g

—

1.7

1.9

4.8

5.0

—

V_DS= -15V, V_GS= -10V,

I_D= -3.8A

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Q_gs

Q_gd

t_D(ON)

t_R

V_DS= -15V, V_GS= -10V,

I_D= -1A, R_G= 6.0Ω

Turn-Off Delay Time

Fall Time

t_D(OFF)

t_F

Notes:

6. Device mounted on FR-4 PCB on 2 oz., 0.5 inch²copper pads and t ≤5 sec.

7. Pulse width ≤10µs, Duty Cycle ≤1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

2 of 6

www.diodes.com

October 2017

DMP3099LQ

Document number: DS40182 Rev. 1 - 2

123 4 5 6

中文翻译

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