Datasheet > DMP2066LSS

DMP2066LSS

更新时间： 2024-01-22 12:05:14

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	161K
描述
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMP2066LSS 数据手册

DMP2066LSS

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072g (approximate)

•

40mΩ @ V_GS= -4.5V

70mΩ @ V_GS= -2.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

SOP-8L

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-20

Units

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1)

Steady

State

T_A= 25°C

T_A= 70°C

-6.5

-5.2

I_D

Pulsed Drain Current (Note 3)

-26

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

2.5

Unit

P_D

Thermal Resistance, Junction to Ambient

°C/W

R_θ

Operating and Storage Temperature Range

-55 to +150

°C

T_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

-20

⎯

BV_DSS

I_DSS

I_GSS

⎯

-1

V_GS= 0V, I_D= -250μA

V_DS= -20V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

μA

Gate-Source Leakage

±100

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-0.6

-1.2

V_GS(th)

⎯

V_DS= V_GS, I_D= -250μA

⎯

V_GS= -4.5V, I_D= -5.8A

V_GS= -2.5V, I_D= -3.8A

V_DS= -10V, I_D= -4.6A

V_GS= 0V, I_S= -2.1A

Static Drain-Source On-Resistance

R_{DS (ON)}

mΩ

⎯

-1.4

⎯

-0.5

⎯

-0.72

Forward Transconductance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

g_fs

V_SD

820

200

160

C_iss

C_oss

C_rss

⎯

_DS= -15V, V_GS= 0V

f = 1.0MHz

Notes:

1. Device mounted on 2 oz. Copper pads on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

August 2008

DMP2066LSS

Document number: DS31522 Rev. 1 - 2

12 3 4

中文翻译

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与DMP2066LSS相关器件

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