Datasheet > DMP1012USS

DMP1012USS

更新时间： 2023-12-06 20:11:08

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	370K
描述
12V P-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMP1012USS 数据手册

DMP1012USS

30.0

25.0

20.0

15.0

10.0

5.0

V_GS= -1.8V

V_GS=-2.0V

V_DS= -5V

V_GS=-2.5V

V_GS= -3.0V

V_GS= -3.5V

V_GS= -4.0V

V_GS= -4.5V

V_GS= -1.5V

T_J=125℃

T_J=85℃

T_J=150℃

V_GS= -1.2V

V_GS=-1V

T_J=25℃

T_J=-55℃

0.0

0.5

1.5

2.5

0.5

1.5

2.5

V_DS,DRAIN-SOURCE VOLTAGE(V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

0.05

0.045

0.04

0.035

0.03

0.025

0.02

0.015

0.01

0.005

0.3

0.25

0.2

V_GS= -1.8V

I_D= -9A

I_D= -7A

I_D= -6A

V_GS= -2.5V

0.15

0.1

I_D= -4A

V_GS= -3.3V

V_GS= -3.7V

0.05

V_GS= -4.5V

10 15 20 25 30 35 40 45 50

I_D, DRAIN-SOURCE CURRENT(A)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

0.02

0.018

0.016

0.014

0.012

0.01

1.8

1.6

1.4

1.2

V_GS= -4.5V

V_GS= -3.7V, I_D= -7A

T_J=125℃

T_J=150℃

V_GS= -3.3V, I_D= -7A

V_GS= -2.5V, I_D= -6A

T_J=85℃

T_J=25℃

V_GS= -1.8V, I_D= -4A

0.008

0.006

0.004

0.002

T_J=-55℃

0.8

0.6

V_GS= -4.5V, I_D= -9A

-50

-25

100 125 150

I_D, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

3 of 7

www.diodes.com

August 2018

DMP1012USS

Document number: DS40492 Rev. 3 - 2

1 234 5 6 7

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