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DMN62D0UT PDF预览

DMN62D0UT

更新时间: 2023-12-06 20:11:16
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 519K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMN62D0UT 数据手册

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DMN62D0UT  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.6  
0.4  
0.2  
0
VDS=5V  
VDS=5V  
VGS=2.5V  
VGS=3.0V  
VGS=4.5V  
VGS=2.0V  
VGS=1.8V  
TA=125  
TA=150℃  
TA=85℃  
TA=25  
VGS=1.5V  
VGS=1.3V  
TA=-55℃  
0
1
2
3
4
5
0.5  
1
1.5  
2
2.5  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2. Typical Transfer Characteristic  
3
3
2.5  
2
2.5  
2
VGS=2.5V  
1.5  
1
VGS=4.5V  
1.5  
1
ID=100mA  
0.5  
0
0
5
10  
15  
20  
0
0.2  
0.4  
0.6  
0.8  
1
ID, DRAIN-SOURCE CURRENT (A)  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 4. Typical Transfer Characteristic  
Figure 3. Typical On-Resistance vs. Drain Current and  
Gate Voltage  
4.5  
2.2  
2
TA=150℃  
VGS= 4.5V  
4
3.5  
3
TA=125℃  
TA=85℃  
1.8  
1.6  
1.4  
1.2  
1
VGS=4.5V, ID=100mA  
2.5  
2
TA=25℃  
TA=-55℃  
1.5  
1
VGS=2.5V, ID=50mA  
0.8  
0.6  
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
-50 -25  
0
25  
50  
75 100 125 150  
ID, DRAIN CURRENT (A)  
TJ, JUNCTION TEMPERATURE ()  
Figure 6. On-Resistance Variation with Junction  
Temperature  
Figure 5. Typical On-Resistance vs. Drain Current and  
Temperature  
3 of 7  
www.diodes.com  
March 2020  
© Diodes Incorporated  
DMN62D0UT  
Document number: DS38186 Rev. 4 - 2  

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