是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 23 weeks |
风险等级: | 1.6 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 253596 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (N-Channel) |
Samacsys Package Category: | SOT23 (3-Pin) | Samacsys Footprint Name: | MMZ1005S102HT000 |
Samacsys Released Date: | 2019-02-11 12:34:28 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.085 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.15 W | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMN6075SQ | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN60H080DS | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET | |
DMN60H080DS-13 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET | |
DMN60H080DS-7 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET | |
DMN6140L | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6140L-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
DMN6140L-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
DMN6140LQ | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6140LQ-13 | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6140LQ-7 | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |