Datasheet > DMN6069SEQ

DMN6069SEQ

更新时间： 2023-12-06 20:11:27

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描述
60V N-Channel Enhancement Mode MOSFET

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DMN6069SEQ 数据手册

DMN6069SEQ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

V_GSS

T_A= +25°C

4.3

3.3

I_D

T_A= +70°C

T_C= +25°C

T_C= +70°C

Continuous Drain Current (Note 5) V_GS= 10V

I_D

I_DM

I_S

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Maximum Body Diode Continuous Current

Avalanche Current, L = 3mH

4.3

I_AS

E_AS

Avalanche Energy, L = 3mH

37.5

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

2.2

Unit

Total Power Dissipation (Note 5)

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

P_D

1.2

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 5)

100

°C/W

R_θJA

P_D

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

8.9

°C/W

R_θJC

T_J, T_STG

-55 to +150

°C

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

—

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

—

0.8

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 3A

V_GS= 4.5V, I_D= 2.4A

V_GS= 0V, I_S= 2.5A

—

Static Drain-Source On-Resistance

100

1.1

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

—

—

—

—

—

—

—

—

—

—

—

825

C_iss

C_oss

C_rss

R_G

V_DS= 30V, V_GS= 0V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

2.3

7.2

Ω

V_DS= 0V, V_GS= 0V, f = 1.0MHz

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 10V)

Gate-Source Charge

Q_g

nC

V_DS= 30V, I_D= 12A

3.2

2.8

3.8

6.7

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DD= 30V, V_GS= 10V

R_G= 6Ω, I_D= 12A

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

5.3

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

February 2023

DMN6069SEQ

Document number: DS44584 Rev. 2 - 2

123 4 5 6 7

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