Datasheet > DMN601WKQ

DMN601WKQ

更新时间： 2023-12-06 20:11:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	612K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN601WKQ 数据手册

DMN601WKQ

1.0

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

= 10V

= 5.0V

= 5V

= 3.5V

= 4.5V

= 3.0V

T = 85°C

= 25°C

= 125°C

= -55°C

= 150°C

= 2.2V

= 2.5V

0.0

2.2

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

= 4.5V

1.8

1.6

1.4

= 500mA

= 10V

1.2

0.2

0.4

0.6

0.8

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

= 10V

1.8

1.6

1.4

1.2

= 500mA

= 150°C

= 5V

= 50mA

= 125°C

= 85°C

= 25°C

= -55°C

0.8

0.6

0.2

0.4

0.6

0.8

-50 -25

T_J, JUNCTION TEMPERATURE (C)

Figure 6 On-Resistance Variation with Temperature

75 100 125 150

I_D, DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

3 of 7

www.diodes.com

August 2023

DMN601WKQ

Document number: DS38408 Rev. 2 - 2

1 234 5 6 7

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