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DMN2991UTQ PDF预览

DMN2991UTQ

更新时间: 2023-12-06 20:11:39
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 559K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2991UTQ 数据手册

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DMN2991UTQ  
1.6  
1.4  
1.2  
1
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGS = 1.5V, ID = 10mA  
VGS = 1.8V, ID = 20mA  
ID = 1mA  
ID = 250μA  
0.8  
0.6  
0.4  
0.2  
0
VGS = 2.5V, ID = 50mA  
VGS = 4.5V, ID = 100mA  
-50  
-25  
0
25  
50  
75  
100 125 150  
-50 -25  
0
25  
50  
75  
100 125 150  
TJ, JUNCTION TEMPERATURE ()  
Figure 8. Gate Threshold Variation vs. Junction  
Temperature  
TJ, JUNCTION TEMPERATURE ()  
Figure 7. On-Resistance Variation with Temperature  
2
1.8  
1.6  
1.4  
1.2  
1
100  
f = 1MHz  
VGS = 0V  
Ciss  
10  
TJ = 150oC  
TJ = 125oC  
Coss  
0.8  
0.6  
0.4  
0.2  
0
TJ = 85oC  
Crss  
TJ = 25oC  
TJ = -55oC  
1
0
0.3  
0.6  
0.9  
1.2  
0
5
10  
15  
20  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Figure 9. Diode Forward Voltage vs. Current  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 10. Typical Junction Capacitance  
8
7
6
5
4
3
2
1
0
10  
RDS(ON)  
Limited  
PW = 100µs  
1
0.1  
PW = 1ms  
PW = 10ms  
PW = 100ms  
PW = 1s  
PW = 10s  
TJ(Max) = 150  
TC = 25℃  
Single Pulse  
DUT on 1*MRP  
Board  
VDS = 10V, ID = 250mA  
DC  
0.01  
0.001  
VGS = 4.5V  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.1  
1
10  
100  
Qg (nC)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 11. Gate Charge  
Figure 12. SOA, Safe Operation Area  
4 of 7  
www.diodes.com  
November 2020  
© Diodes Incorporated  
DMN2991UTQ  
Document number: DS42636 Rev. 2 - 2  

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