Datasheet > DMN2991UTQ

DMN2991UTQ

更新时间： 2023-12-06 20:11:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	559K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN2991UTQ 数据手册

DMN2991UTQ

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

0.2

0.0

V_DS= 5V

V_GS= 2.0V

V_GS= 1.8V

V_GS= 1.5V

T_J= -55℃

T_J= 25℃

T_J= 85℃

V_GS= 4.5V

V_GS= 4.0V

V_GS= 3.5V

V_GS= 3.0V

V_GS= 2.5V

T_J= 125℃

T_J= 150℃

V_GS= 1.3V

V_GS= 1.2V

0.5

1.5

2.5

0.5

1.5

2.5

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

Figure 2. Typical Transfer Characteristic

1.8

1.6

1.4

1.2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

V_GS= 1.8V

V_GS= 2.5V

V_GS= 4.5V

0.8

0.6

0.4

0.2

I_D= 100mA

0.3

0.6

0.9

1.2

1.5

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

1.8

1.6

1.4

1.2

V_GS= 4.5V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

V_GS= 4.5V, I_D= 100mA

T_J= 150℃

V_GS= 2.5V, I_D= 50mA

V_GS= 1.8V, I_D= 20mA

T_J= 125℃

T_J= 85℃

T_J= 25℃

T_J= -55℃

V_GS= 1.5V, I_D= 10mA

0.8

0.6

-50 -25

100 125 150

0.2

0.4

0.6

0.8

T_J, JUNCTION TEMPERATURE (℃)

I_D, DRAIN CURRENT (A)

Figure 6. On-Resistance Variation with Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

3 of 7

www.diodes.com

November 2020

DMN2991UTQ

Document number: DS42636 Rev. 2 - 2

1 234 5 6 7

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