Datasheet > DMJ2093-252

DMJ2093-252

更新时间： 2024-01-05 10:58:21

品牌	Logo	应用领域
思佳讯 - SKYWORKS		二极管
页数	文件大小	规格书
8页	176K
描述
Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, PLASTIC, CASE 252, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DMJ2093-252 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PRDB-F3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
风险等级：	5.31	配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容：	0.3 pF	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	频带：	X BAND
JESD-30 代码：	O-PRDB-F3	湿度敏感等级：	1
元件数量：	2	端子数量：	3
最大工作频率：	12.4 GHz	最小工作频率：	8.2 GHz
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	DISK BUTTON
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
子类别：	Microwave Mixer Diodes	表面贴装：	YES
技术：	SCHOTTKY	端子形式：	FLAT
端子位置：	RADIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
肖特基势垒类型：	HIGH BARRIER	Base Number Matches：	1

DMJ2093-252 数据手册

Silicon Beam–Lead

Schottky Barrier Mixer Diodes

DME, DMF and DMJ Series

Features

Ideal for MIC

Low 1/f Noise

Low Intermodulation Distortion

Low Turn On

Hermetically Sealed Packages

SPC Controlled Wafer Fabrication

Description

Alpha beam–lead and chip Schottky barrier mixer

diodes are designed for applications through 40 GHz

in Ka–band. The beam–lead design eliminates the

problem of bonding to the very small junction area

that is characteristic of the low capacitance involved

in microwave devices.

Beam–lead and chip Schottky barrier diodes are

categorized by noise figure for mixer applications in

four frequency ranges: S, X, Ku and Ka–bands.

However, they can also be used as modulators, high

speed switches and low power limiters.

Several types of semiconductor–barrier metal

systems are available, thus allowing proper selection

for optimum mixer design. For most applications the

N–type silicon, low drive types are preferable,

especially for starved LO mixers.

Beam–lead Schottky barrier mixer diodes are made

by the deposition of a suitable barrier metal on an

epitaxial silicon substrate to form the junction. The

process and choice of materials result in low series

resistance along with a narrow spread of capacitance

values for close impedance control.

Beam–lead diodes are ideally suited for balanced

mixers, since they exhibit low parasitics and are

extremely uniform. A typical V vs. I curve is shown

in Figure 1. Typical noise figures vs LO drive is shown

in Figure 2 for single N–type, low drive diode types.

A variety of forward knees are available, ranging from

a low value for low, or starved, local oscillator drive

levels to a higher value for high drive, low intermode

mixer applications. The beam–lead diodes are

available in a wide range of packages as shown.

Capacitance ranges and series resistances are

comparable with the packaged devices that are

available through K–band. The unmounted diodes

are especially well suited for use in microwave

integrated circuits. The mounted devices can be

easily inserted as hybrid elements in stripline,

microstrip or other such circuitry.

Maximum Ratings

Storage Temperature:

Operating Temperature:

Dissipated Power:

Max Current:

–65°C/+175°C

75 mW/Junction

100 mA

Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com

3–12

12 3 4 5 6 7 8

中文翻译

下载PDF

与DMJ2093-252相关器件

型号	品牌	获取价格	描述	数据表
DMJ2180-520-034	SKYWORKS	获取价格	Mixer Diode, High Barrier, K Band, Silicon
DMJ2193-520-034	SKYWORKS	获取价格	Mixer Diode, High Barrier, S Band, Silicon
DMJ2194-520-034	SKYWORKS	获取价格	Mixer Diode, High Barrier, X Band, Silicon
DMJ2195-520-034	SKYWORKS	获取价格	Mixer Diode, High Barrier, KU Band, Silicon
DMJ2208	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
DMJ2208-223	SKYWORKS	获取价格	Mixer Diode, High Barrier, S Band, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 223, 3 P
DMJ2208-504-013	SKYWORKS	获取价格	Mixer Diode, High Barrier, S Band, Silicon, BEAM LEAD PACKAGE-3
DMJ2209	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
DMJ2209-223	SKYWORKS	获取价格	Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 223, 3 P
DMJ2209-504-013	SKYWORKS	获取价格	Mixer Diode, High Barrier, X Band, Silicon, BEAM LEAD PACKAGE-3

产品中心

服务支持

精选活动

关于我们

帮助中心

DMJ2093-252

DMJ2093-252 技术参数

DMJ2093-252 数据手册

与DMJ2093-252相关器件

与DMJ2093-252相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMJ2093-252

DMJ2093-252 技术参数

DMJ2093-252 数据手册

与DMJ2093-252相关器件

与DMJ2093-252相关文章

您还可以找

您在本页遇到什么问题？