Datasheet > DME3273-000

DME3273-000

更新时间： 2024-01-28 03:54:34

品牌	Logo	应用领域
思佳讯 - SKYWORKS		/
页数	文件大小	规格书
8页	176K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DME3273-000 数据手册

Silicon Beam–Lead

Schottky Barrier Mixer Diodes

DME, DMF and DMJ Series

Features

Ideal for MIC

Low 1/f Noise

Low Intermodulation Distortion

Low Turn On

Hermetically Sealed Packages

SPC Controlled Wafer Fabrication

Description

Alpha beam–lead and chip Schottky barrier mixer

diodes are designed for applications through 40 GHz

in Ka–band. The beam–lead design eliminates the

problem of bonding to the very small junction area

that is characteristic of the low capacitance involved

in microwave devices.

Beam–lead and chip Schottky barrier diodes are

categorized by noise figure for mixer applications in

four frequency ranges: S, X, Ku and Ka–bands.

However, they can also be used as modulators, high

speed switches and low power limiters.

Several types of semiconductor–barrier metal

systems are available, thus allowing proper selection

for optimum mixer design. For most applications the

N–type silicon, low drive types are preferable,

especially for starved LO mixers.

Beam–lead Schottky barrier mixer diodes are made

by the deposition of a suitable barrier metal on an

epitaxial silicon substrate to form the junction. The

process and choice of materials result in low series

resistance along with a narrow spread of capacitance

values for close impedance control.

Beam–lead diodes are ideally suited for balanced

mixers, since they exhibit low parasitics and are

extremely uniform. A typical V vs. I curve is shown

in Figure 1. Typical noise figures vs LO drive is shown

in Figure 2 for single N–type, low drive diode types.

A variety of forward knees are available, ranging from

a low value for low, or starved, local oscillator drive

levels to a higher value for high drive, low intermode

mixer applications. The beam–lead diodes are

available in a wide range of packages as shown.

Capacitance ranges and series resistances are

comparable with the packaged devices that are

available through K–band. The unmounted diodes

are especially well suited for use in microwave

integrated circuits. The mounted devices can be

easily inserted as hybrid elements in stripline,

microstrip or other such circuitry.

Maximum Ratings

Storage Temperature:

Operating Temperature:

Dissipated Power:

Max Current:

–65°C/+175°C

75 mW/Junction

100 mA

Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com

3–12

12 3 4 5 6 7 8

中文翻译

下载PDF

与DME3273-000相关器件

型号	品牌	获取价格	描述	数据表
DME3273-257	SKYWORKS	获取价格	Mixer Diode, Silicon,
DME3274-000	SKYWORKS	获取价格	Mixer Diode, Silicon,
DME3274-257	SKYWORKS	获取价格	Mixer Diode, Silicon,
DME3275-000	SKYWORKS	获取价格	Mixer Diode, 6dB Noise Figure, Silicon
DME3276-000	SKYWORKS	获取价格	Mixer Diode, 6dB Noise Figure, Silicon
DME3277-000	SKYWORKS	获取价格	Mixer Diode, 6.5dB Noise Figure, Silicon
DME3278	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
DME3278-325-025	SKYWORKS	获取价格	Mixer Diode, Medium Barrier, S Band, Silicon
DME3279	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
DME3279-000	SKYWORKS	获取价格	Mixer Diode, 6dB Noise Figure, Silicon

与DME3273-000相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

5
高压电解电容的分类与选型策略
2024-06-28

6
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

12

产品中心

服务支持

精选活动

关于我们

帮助中心

DME3273-000

DME3273-000 数据手册

与DME3273-000相关器件

与DME3273-000相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DME3273-000

DME3273-000 数据手册

与DME3273-000相关器件

与DME3273-000相关文章

您还可以找

您在本页遇到什么问题？