Datasheet > DMC1015UPD

DMC1015UPD

更新时间： 2023-12-06 20:10:57

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
11页	891K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1015UPD 数据手册

DMC1015UPD

Typical Characteristics – P-CHANNEL

30.0

V_GS= -2.5V

V_DS= -5V

25.0

V_GS= -3.0V

V_GS= -4.5V

20.0

V_GS= -8.0V

15.0

10.0

5.0

V_GS= -2.0V

V_GS= -1.5V

T_J= 125℃

T_J= 150℃

T_J= 85℃

T_J= 25℃

T_J= -55℃

V_GS= -1.2V

0.0

0.5

1.5

2.5

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 13. Typical Output Characteristic

Figure 14. Typical Transfer Characteristic

0.2

0.15

0.1

0.07

0.06

0.05

0.04

0.03

0.02

0.01

I_D= -8.9A

V_GS= -2.5V

I_D= -6.9A

0.05

V_GS= -4.5V

V_GS, GATE-SOURCE VOLTAGE (V)

I_D, DRAIN-SOURCE CURRENT (A)

Figure 16. Typical Transfer Characteristic

Figure 15. Typical On-Resistance vs. Drain Current and

Gate Voltage

0.045

0.04

1.6

1.4

1.2

V_GS= -4.5V

150℃

0.035

0.03

125℃

85℃

V_GS= -4.5V, I_D= -8.9A

0.025

0.02

25℃

-55℃

0.8

0.6

0.015

0.01

V_GS= -2.5V, I_D= -6.9A

-50

-25

100 125 150

I_D, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 17. Typical On-Resistance vs. Drain Current and

Junction Temperature

Figure 18. On-Resistance Variation with Junction

Temperature

6 of 11

www.diodes.com

August 2023

DMC1015UPD

Document number: DS37992 Rev. 5 - 2

1...3 4 567 8 9...11

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