Datasheet > DMC1015UPD

DMC1015UPD

更新时间： 2023-12-06 20:10:57

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
11页	891K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1015UPD 数据手册

DMC1015UPD

Typical Characteristics – N-CHANNEL (continued)

0.02

0.018

0.016

0.014

0.8

0.6

0.4

0.2

I_D= 1mA

V_GS= 2.5V, I_D= 9.8A

0.012

I_D= 250μA

0.01

0.008

V_GS= 4.5V, I_D= 11.8A

0.006

0.004

0.002

-50

-25

100 125 150

-50

-25

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

Figure 7. On-Resistance Variation with Junction

Temperature

10000

1000

100

V_GS= 0V

f = 1MHz

C_iss

T_J= 85^oC

T_J= 25^oC

T_J= -55^oC

C_oss

T_J= 125^oC

T_J= 150^oC

C_rss

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

4.5

100

P_W=100µs

R_DS(ON)Limited

3.5

2.5

P_W=1ms

P_W=10ms

P_W=100ms

P_W=1s

V_DS= 6V, I_D= 11.8A

1.5

0.1

0.01

T_J(Max)= 150℃ T_C= 25℃ P_W=10s

Single Pulse

DUT on 1*MRP Board

V_GS= 4.5V

0.5

0.01

0.1

100

Typical Charact²eristics - P-CHA¹⁰

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Qg (nC)

Figure 11. Gate Charge

5 of 11

www.diodes.com

August 2023

DMC1015UPD

Document number: DS37992 Rev. 5 - 2

1 2 3 456 7 8...11

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