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DM74S473AJ PDF预览

DM74S473AJ

更新时间: 2024-11-14 22:36:31
品牌 Logo 应用领域
美国国家半导体 - NSC 可编程只读存储器
页数 文件大小 规格书
7页 130K
描述
(512 x 8) 4096-Bit TTL PROM

DM74S473AJ 数据手册

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November 1990  
DM74S473  
(512 x 8) 4096-Bit TTL PROM  
General Description  
Features  
Y
Advanced titanium-tungsten (Ti-W) fuses  
This Schottky memory is organized in the popular 512  
words by 8 bits configuration. A memory enable input is pro-  
vided to control the output states. When the device is en-  
abled, the outputs represent the contents of the selected  
word. When disabled, the 8 outputs go to the ‘‘OFF’’ or high  
impedance state.  
Y
Schottky-clamped for high speed  
Address accessÐ45 ns max  
Enable accessÐ30 ns max  
Enable recoveryÐ30 ns max  
Y
PNP inputs for reduced input loading  
Y
PROMs are shipped from the factory with lows in all loca-  
tions. A high may be programmed into any selected location  
by following the programming instructions.  
All DC and AC parameters guaranteed over  
temperature  
Low voltage TRI-SAFETM programming  
Open-collector outputs  
Y
Y
Block Diagram  
TL/D/9715–1  
Pin Names  
Addresses  
A0A8  
G
Output Enable  
Ground  
GND  
Q0Q7  
Outputs  
V
CC  
Power Supply  
TRI-SAFETM is a trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/D/9715  
RRD-B30M105/Printed in U. S. A.  

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