Datasheet > DM-231

DM-231

更新时间： 2024-01-25 06:11:01

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描述
Magnetoresistance Element

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DM-231 数据手册

DM-231

Magnetoresistance Element

For the availability of this product, please contact the sales office.

Description

M-118 (Plastic)

DM-231 a magnetic sensor using magnetoresist-

ance effect is composed of ferromagnetic material

deposited by evaporation on a silicon substrate. It is

suitable for angle of rotation detection.

Features

• Low magnetic field and high sensitivity: bridge type

stands for large output voltage

150 mVp-p (Min.) at VCC=5 V, H=14400 A/m

• Fitted with bias magnet: stable output.

• High reliability: Achieved through silicon nitride

protective film.

Structure

Ferromagnetic thin film circuit (With ferrite magnet)

Applications

• Non-contact angle of rotation detection.

• Contactless potentiometer.

Absolute Maximum Ratings (Ta=25 °C)

• Supply voltage

V^CC

• Storage temperature

Tstg

–30 to +100 °C

Recommended Operating Conditions

• Supply voltage

VCC

• Operating temperature Topr

–20 to + 75 °C

Electrical Characteristics

Ta=25 °C

Unit

Item

Symbol

Condition

Min.

150

Typ.

Max.

VCC=5 V , H=14400 A/m (Peak)

AC magnetic field θ =0 °

VCC=5 V , H=0 A/m

Output voltage

V^O

mVp-p

Midpoint potential

VA, VB

|VA-VB|

2.475

2.525

Midpoint potential

VCC=5 V , H=0 A/m

difference/Output voltage

H=14400 A/m (Peak)

Total resistance

500

650

800

Ω

AC magnetic field θ =0 °

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—1—

E88Z12C5X-TE

12 3 4 5

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