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DLM10E PDF预览

DLM10E

更新时间： 2024-09-25 19:40:11
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 48K
描述
1A, SILICON, SIGNAL DIODE

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中文翻译

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DLM10E 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：1 week
风险等级：5.65Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-XALF-W2JESD-609代码：e3
元件数量：1端子数量：2
最大输出电流：1 A封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified最大反向恢复时间：0.03 µs
表面贴装：NO端子面层：Tin (Sn)
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

DLM10E 数据手册

 浏览型号DLM10E的Datasheet PDF文件第2页浏览型号DLM10E的Datasheet PDF文件第3页 
Ordering number : EN2792B  
SANYO Sem iconductors  
DATA S HEET  
Silicon Diffused Junction Type  
DLM10  
1.0A Ultrahigh-Speed Rectifier  
Applications  
•
Switching regulators, high-frequency rectification.  
Features  
•
Fast reverse recovery time and small switching loss.  
• Reverse voltage : V =200 to 400V.  
RM  
• Average rectified current : I =1.0A.  
O
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Peak Reverse Voltage  
Symbol  
Conditions  
DLM10C  
200  
DLM10E  
400  
Unit  
V
V
RM  
50Hz, resistive load, no fin, Ta=57°C resistive load  
(L=8mm, print land 10✕10mm)  
Average Rectified Current  
I
O
1.0  
A
Surge Forward Current  
Junction Temperature  
Storage Temperature  
I
50Hz sine wave, 1cycle  
30  
A
FSM  
Tj  
150  
°C  
°C  
Tstg  
--40 to +150  
Electrical Characteristics [DLM10C] at Ta=25°C  
Ratings  
typ  
Parameter  
Forward Voltage  
Symbol  
Conditions  
Unit  
min  
max  
0.98  
V
I =1.0A  
V
µA  
F
F
Reverse Current  
I
V
=200V  
RM  
10  
35  
R
Reverse Recovery Time  
t
I
=1A, --di/dt=50A/µs  
FM  
No heat sink, DLM10 only  
ns  
rr  
Rth(j-a)  
Thermal Resistance (Junction-Ambient)  
115  
°C / W  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91907RL TI IM TC-00000895 / 53098 HA (KT)/92995 GI (KOTO)/5108 TA, TS No.2792-1/3  
123

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