Datasheet > DGP20N65CTL0

DGP20N65CTL0

更新时间： 2024-03-03 10:09:19

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扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	573K
描述
TO-220

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数据手册

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DGP20N65CTL0 数据手册

RoHS

DGP20N65CTL0

COMPLIANT

Operating Junction Temperature

Storage Temperature

T_j

T_s

-40...+175

°C

-55...+150

260

°C

Soldering Temperature, wave soldering 1.6mm

(0.063in.) from case for 10s

Electrical Characteristics of the IGBT（T_j= 25℃unless otherwise specified）：

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Collector-Emitter

BV_CES

V_GE(th)

650

5.0

V_GE=0V, I_C=250μA

Breakdown Voltage

Gate Threshold Voltage

5.8

6.5

V_GE=V_CE, I_C=1mA

V_GE=15V, I_C=20A

T_j=25°C,

T_j=125°C

Collector-Emitter

Saturation Voltage

1.60

1.75

1.80

1.95

V_CE(sat)

T_j=150°C

V_CE=650V, V_GE=0V

T_j= 25°C,

T_j=150°C

Zero Gate Voltage

Collector Current

I_CES

0.25

1.00

Gate-Emitter

Leakage Current

±200

I_GES

V_CE= 0V, V_GE= ± 20V

Conditions

Parameter

Symbol

Min.

Typ.

Max.

Unit

Dynamic

Input Capacitance

Output capacitance

0.90

0.04

C_ies

V_CE= 25V, V_GE= 0V,

f = 1MHz

C_oes

Reverse Transfer

Capacitance

0.01

C_res

Q_G

V_CC=300V,I_C=20A,

V_GE=15V

Gate Charge

0.085

V_GE=15V,t_SC≤

V_CC=400V,

T_j_,_start=25°C

5us

Short circuit collector

current

I_C

115

（

）

S-M380D

Rev.1.2, 16-May-23

www.21yangjie.com

123 4 5 6 7 8

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