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DG9234EDQ-T1-GE3

更新时间： 2024-12-02 00:53:59
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
12页 276K
描述
1 pC Charge Injection, 100 pA Leakage, 5 V / 3 V, Dual SPST Analog Switches

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DG9234EDQ-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：MSOP-8Reach Compliance Code：compliant
Factory Lead Time：21 weeks风险等级：1.74
模拟集成电路 - 其他类型：SPSTJESD-30 代码：S-PDSO-G8
长度：3 mm信道数量：1
功能数量：2端子数量：8
最大通态电阻 (Ron)：50 Ω最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装形状：SQUARE
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
座面最大高度：1.1 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES最长断开时间：120 ns
最长接通时间：200 ns技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3 mm
Base Number Matches：1

DG9234EDQ-T1-GE3 数据手册

 浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第2页浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第3页浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第4页浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第5页浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第6页浏览型号DG9234EDQ-T1-GE3的Datasheet PDF文件第7页 
DG9232E, DG9233E, DG9234E  
www.vishay.com  
Vishay Siliconix  
1 pC Charge Injection, 100 pA Leakage, +5 V / +3 V,  
Dual SPST Analog Switches  
DESCRIPTION  
FEATURES  
The DG9232E, DG9233E, and DG9234E are monolithic  
CMOS switches designed for precision signal switching.  
The 17 low voltage parts feature low charge injection,  
leakage, parasitic capacitance, and fast switching.  
• 1 pC charge injection  
• Guaranteed 100 pA maximum switch on  
leakage at 25 °C  
Available  
Available  
• 3.8 pF switch off and 7.8 pF switch on  
capacitances  
The DG9232E, DG9233E, and DG9234E can switch both  
analog and digital signals. Each switch conducts equally  
well in both directions when on, and blocks up to the power  
supply level when off.  
• +2.7 V to +5 V single supply operation  
• Low on-resistance - RDS(on): 17 / typ. at 5 V  
• tON: 32 ns, tOFF: 10 ns switching time  
• Typical power consumption: 1 nW  
The DG9232E, DG9233E, and DG9234E contain two  
independent single pole single throw (SPST) switches.  
Switch-1 and switch-2 are normally closed for the DG9232E  
and normally open for the DG9233E. For the DG9234E,  
switch-1 is normally open and switch-2 is normally closed  
with a break-before-make switching timing.  
• Over voltage tolerant TTL / CMOS compatible  
• ESD (HBM): 8000 V, ESD (CDM): 1000 V  
• Latch-up current: > 300 mA (JESD78)  
• Available in MSOP-8 and SOIC-8  
The DG9232E, DG9233E, and DG9234E offer 1 nW typical  
power consumption and 8 kV ESD/HBM, 1 kV ESD/CDM  
tolerance. They are the ideal switches for use in low voltage  
instruments and healthcare devices, fitting the circuits of  
low voltage ADC and DAC, sample and hold, analog front  
end gain control, and signal path control. The DG9232E,  
DG9233E, and DG9234E are available in 8-lead MSOP and  
SOIC packages.  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Note  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
APPLICATIONS  
BENEFITS  
• Automatic test equipment  
• Process control and automation  
• Data acquisition systems  
• Meters and instruments  
• Medical and healthcare systems  
• Communication systems  
• Sample-and-hold systems  
• Relay replacements  
• Low charge injection and leakage  
• Low parasitic capacitance  
• Fast switching speed  
• High ESD tolerance  
• Battery powered systems  
S16-1451-Rev. A, 25-Jul-16  
Document Number: 75165  
1
For technical questions, contact: analogswitchtechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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