Quad SPST CMOS Analog Switches
ABSVLUTE MAXIMUM RATINGS (DG2ꢁ2)
5+ to 5-………………………………….............……………….±±5
Operating Temperature Range
5
5
5
5
to Ground…………………………..................…. ……...5-, 5+
to Ground………....................……………………….-0.35, 2ꢀ5
DG212C................................……………...……...0°C to +70°C
DG212D/E .........................……………...……...-±0°C to +ꢁꢀ°C
IN
L
S
or 5 to 5+……...........................………………………0, -±05
Power Dissipation (T = +70°C) (Note 1)
D
A
or 5 to 5-……………........................…………………..0, ±05
16-Pin Plastic Dip (derate 10.ꢀmW/°C above +70°C) ..ꢁ±2mW
16-Pin Narrow SO (derate ꢁ.7mW/°C above+70°C). ....696mW
16-Pin TSSOP (derate 9.±mW/°C above +70°C) ..........7ꢀꢀmW
16-Pin QFN (ꢀmm ꢂ ꢀmm)
(derate 19.2mW/°C above +70°C).........................1ꢀ3ꢁmW
16-Pin Thin QFN
S
D
5+ to Ground…………………...................................………...2ꢀ5
5- to Ground…………………………………….................…...-2ꢀ5
Current, Any Terminal Eꢂcept S or D……….............……...30mA
Continuous Current, S or D……………………..............…...20mA
Peak Current, S or D
(pulsed at 1ms 10% duty cycle maꢂ)…..........................70mA
Storage Temperature Range……………..……..-6ꢀ°C to +12ꢀ°C
(derate 1±.7mW/°C above +70°C).........................1177mW
Nꢀte ꢁ: Device mounted with all leads soldered to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (DG2ꢁ2)
(5+ = +1ꢀ5, 5- = -1ꢀ5, GND = 0, T = +2ꢀ°C, unless otherwise noted.) (For more information on TYP values see Note 2.)
A
PARAMETER
SYMBVL
CVNDITIVNS
MIN
TYP
MAX
UNITS
SWITCH
Analog Signal Range
5
-1ꢀ
+1ꢀ
17ꢀ
ꢀ.0
5
ANALOG
Drain-Source ON-Resistance
R
5
5
= ±105, 5 = 2.±5, I = 1mA
11ꢀ
0.01
-0.02
0.01
-0.02
0.1
Ω
DS (ON)
D
IN
S
5 = 1±5, 5 = -1±5
S
D
Source OFF-Leakage Current
Drain OFF-Leakage Current
I
I
= 0.ꢁ5
= 0.ꢁ5
S (OFF)
IN
5 = -1±5, 5 = 1±5
-ꢀ.0
-ꢀ.0
-ꢀ.0
-1.0
S
D
5 = 1±5, 5 = -1±5
ꢀ.0
ꢀ.0
S
D
5
nA
µA
D (OFF)
IN
5 = -1±5, 5 = 1±5
S
D
5 = 5 = 1±5, 5 = 2.±5
S
D
IN
Drain ON-Leakage Current
(Note 3)
I
D (ON)
5 = 5 = -1±5, 5 = 2.±5
-0.1ꢀ
S
D
IN
INPUT
5
5
= 2.±5
= 1ꢀ5
-0.000±
0.003
IN
IN
Input Current with Input 5oltage
High
I
INH
1.0
Input Current with Input 5oltage
Low
I
5
= 0
-1.0
-0.000±
INL
IN
DYNAMIC
Turn-ON Time
t
±60
360
±ꢀ0
ꢀ
1000
ꢀ00
ON
See Switching Time Test Circuit
t
t
ns
pF
dB
OFF1
OFF2
5 = 25, R = 1kΩ, C = 3ꢀpF
Turn-OFF Time
S
L
L
Source OFF-Capacitance
Drain OFF-Capacitance
Channel ON-Capacitance
OFF-Isolation (Note ±)
C
5 = 0, 5 = 0, f = 1MHz
S (OFF)
D (OFF)
S
IN
C
5
5
= 0, 5 = 0, f = 1MHz
ꢀ
D
D
IN
C
= 5 = 0, 5 = ꢀ5, f = 1MHz
16
70
D + S (ON)
OIRR
S
IN
5
= 0, R = 1kΩ, C = 1ꢀpF,
L L
IN
Crosstalk
(Channel to Channel)
5 = 15RMS, f = 100kHz
S
CCRR
90
2
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