DG2032E
Vishay Siliconix
www.vishay.com
2.5 , High Bandwidth, Dual SPDT Analog Switch
DESCRIPTION
The DG2032E is
double-throw monolithic CMOS analog switch. Designed
to operate from 1.8 V to 5.5 V power supply, the DG2032E
achieves a bandwidth of 221 MHz while providing low
on-resistance (2.5 ), excellent on-resistance matching
(0.3 ) and flatness (1 ) over the entire signal range.
FEATURES
• 1.8 V to 5.5 V single supply operation
• Low RON: 2.5 at 4.5 V
• 221 MHz, -3 dB bandwidth
• Low off-isolation, -58 dB at 1 MHz
• +1.6 V logic compatible
a
low-voltage dual single-pole /
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
The DG2032E offers the advantage of high linearity that
reduces signal distortion, making ideal for audio, video, and
USB signal routing applications.
BENEFITS
Built on Vishay Siliconix’s proprietary sub-micron
high-density process, the DG2032E brings low power
consumption at the same time as reduces PCB spacing with
the QFN12 package.
• High linearity
• Low power consumption
• High bandwidth
• Full rail signal swing range
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. The QFN12
package has a nickel-palladium-gold device termination
and is represented by the lead (Pb)-free “-GE4” suffix. The
nickel-palladium-gold device terminations meet all JEDEC®
standards for reflow and MSL ratings.
APPLICATIONS
• USB / UART signal switching
• Audio / video switching
• Cellular phone
• Media players
• Modems
• Hard drives
• PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1 COM1 N/C
12
11
10
TRUTH TABLE
LOGIC
NC1 AND NC2
NO1 AND NO2
NO1
GND
NO2
NC1
V+
1
2
3
9
8
7
0
1
ON
OFF
ON
OFF
NC2
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
PART NUMBER
4
5
6
12-Pin QFN
(3 mm x 3 mm)
IN2 COM2 N/C
Top view
-40 °C to +85 °C
DG2032EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
UNIT
Reference to GND
V+
-0.3 to +6
-0.3 to (V+ + 0.3)
50
200
-65 to +150
1295
V
IN, COM, NC, NO a
Continuous current (any terminal)
mA
Peak current (pulsed at 1 ms, 10 % duty cycle)
Storage temperature (D suffix)
Power dissipation (packages) b
°C
mW
12-Pin QFN (3 mm x 3 mm) c
ESD / HBM
ESD / CDM
Latch up
EIA / JESD22-A114-A
EIA / JESD22-C101-A
JESD78
7.5k
1.5k
300
V
mA
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 4 mW/°C above 70 °C
S17-0462-Rev. A, 27-Mar-17
Document Number: 78604
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000