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DG2032EDN-T1-GE4 PDF预览

DG2032EDN-T1-GE4

更新时间: 2024-11-25 01:20:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
9页 169K
描述
2.5 , High Bandwidth, Dual SPDT Analog Switch

DG2032EDN-T1-GE4 数据手册

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DG2032E  
Vishay Siliconix  
www.vishay.com  
2.5 , High Bandwidth, Dual SPDT Analog Switch  
DESCRIPTION  
The DG2032E is  
double-throw monolithic CMOS analog switch. Designed  
to operate from 1.8 V to 5.5 V power supply, the DG2032E  
achieves a bandwidth of 221 MHz while providing low  
on-resistance (2.5 ), excellent on-resistance matching  
(0.3 ) and flatness (1 ) over the entire signal range.  
FEATURES  
• 1.8 V to 5.5 V single supply operation  
• Low RON: 2.5 at 4.5 V  
• 221 MHz, -3 dB bandwidth  
• Low off-isolation, -58 dB at 1 MHz  
• +1.6 V logic compatible  
a
low-voltage dual single-pole /  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
The DG2032E offers the advantage of high linearity that  
reduces signal distortion, making ideal for audio, video, and  
USB signal routing applications.  
BENEFITS  
Built on Vishay Siliconix’s proprietary sub-micron  
high-density process, the DG2032E brings low power  
consumption at the same time as reduces PCB spacing with  
the QFN12 package.  
• High linearity  
• Low power consumption  
• High bandwidth  
• Full rail signal swing range  
As a committed partner to the community and the  
environment, Vishay Siliconix manufactures this product  
with the lead (Pb)-free device terminations. The QFN12  
package has a nickel-palladium-gold device termination  
and is represented by the lead (Pb)-free “-GE4” suffix. The  
nickel-palladium-gold device terminations meet all JEDEC®  
standards for reflow and MSL ratings.  
APPLICATIONS  
• USB / UART signal switching  
• Audio / video switching  
• Cellular phone  
• Media players  
• Modems  
• Hard drives  
• PCMCIA  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
IN1 COM1 N/C  
12  
11  
10  
TRUTH TABLE  
LOGIC  
NC1 AND NC2  
NO1 AND NO2  
NO1  
GND  
NO2  
NC1  
V+  
1
2
3
9
8
7
0
1
ON  
OFF  
ON  
OFF  
NC2  
ORDERING INFORMATION  
TEMP. RANGE  
PACKAGE  
PART NUMBER  
4
5
6
12-Pin QFN  
(3 mm x 3 mm)  
IN2 COM2 N/C  
Top view  
-40 °C to +85 °C  
DG2032EDN-T1-GE4  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
LIMIT  
UNIT  
Reference to GND  
V+  
-0.3 to +6  
-0.3 to (V+ + 0.3)  
50  
200  
-65 to +150  
1295  
V
IN, COM, NC, NO a  
Continuous current (any terminal)  
mA  
Peak current (pulsed at 1 ms, 10 % duty cycle)  
Storage temperature (D suffix)  
Power dissipation (packages) b  
°C  
mW  
12-Pin QFN (3 mm x 3 mm) c  
ESD / HBM  
ESD / CDM  
Latch up  
EIA / JESD22-A114-A  
EIA / JESD22-C101-A  
JESD78  
7.5k  
1.5k  
300  
V
mA  
Notes  
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings  
b. All leads welded or soldered to PC board  
c. Derate 4 mW/°C above 70 °C  
S17-0462-Rev. A, 27-Mar-17  
Document Number: 78604  
1
For technical questions, contact: analogswitchtechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

DG2032EDN-T1-GE4 替代型号

型号 品牌 替代类型 描述 数据表
DG2032DN-T1-E4 VISHAY

功能相似

Analog Switch Dual SPDT 12-Pin QFN EP T/R

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