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DFB2580 PDF预览

DFB2580

更新时间: 2024-01-22 07:28:46
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 336K
描述
Glass Passivated Bridge Rectifiers

DFB2580 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TS6P
包装说明:GREEN, PLASTIC, TS-6P, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
其他特性:UL RECOGNIZED最小击穿电压:800 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3最大非重复峰值正向电流:350 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DFB2580 数据手册

 浏览型号DFB2580的Datasheet PDF文件第2页浏览型号DFB2580的Datasheet PDF文件第3页浏览型号DFB2580的Datasheet PDF文件第4页 
March 2011  
DFB2505 - DFB25100  
Glass Passivated Bridge Rectifiers  
Features  
• UL certificate # E326243  
• Glass passivated junction  
• Ideal for printed circuit board  
• Reliable low cost construction  
• Plastic material has Underwriters Laboratory Flammability Classification 94V-0  
• Surge overload rating to 350 amperes peak  
• High case dielectric strength of 2500 VRMS  
• Isolated voltage from case to lead over 2500 volts  
+
~
~
-
TS-6P  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
DFB25 DFB25 DFB25 DFB25 DFB25 DFB25 DFB25  
05***  
10***  
20***  
40  
60  
80*** 100***  
Maximum  
Recurrent Peak Reverse Voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
VRMS  
VDC  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum  
Average Forward Rectified Current  
I(AV)  
IFSM  
25  
A
A
Peak Forward Surge Current  
(8.3mS Single Half-wave)  
350  
RθJC  
TJ  
6
°C/W  
°C  
Typical Thermal Resistance**  
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
TSTG  
°C  
* Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%  
** Device mounted on 4" x 6" x 0.25" Al-plate heat sink.  
*** In development. Please contact Fairchild Semiconductor for more information.  
Electrical Characteristics TA = 25°C unless otherwise specified  
Symbol  
Parameter  
Test condition  
Value  
Unit  
Maximum  
Instantaneous Forward Voltage  
@ 12.5A  
@ 25A  
1.0  
1.1  
VF  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 125°C  
10  
500  
IR  
μA  
I2t  
Cj  
Rating for fusing (t < 8.3mS)  
508  
110  
A2S  
pF  
Typical Junction Capacitance per leg*  
* Measured at 1MHz and applied Reverse bias of 4.0V DC.  
© 2011 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
DFB2505 - DFB25100 Rev. A4  
1

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