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DF5A12FU PDF预览

DF5A12FU

更新时间: 2024-09-21 19:09:51
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
4页 175K
描述
DIODE 12 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, USV, 1-2V1B, 5 PIN, Voltage Regulator Diode

DF5A12FU 技术参数

生命周期:Active包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.77配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G5元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:12 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL最大电压容差:5.39%
工作测试电流:5 mABase Number Matches:1

DF5A12FU 数据手册

 浏览型号DF5A12FU的Datasheet PDF文件第2页浏览型号DF5A12FU的Datasheet PDF文件第3页浏览型号DF5A12FU的Datasheet PDF文件第4页 
DF5A12FU  
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type  
DF5A12FU  
Unit in mm  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
*This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z The mounting of four devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
1.CATHODE 1  
2. ANODE  
3.CATHODE2  
4.CATHODE3  
5.CATHODE4  
200*  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55 to 150  
°C  
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,  
pad dimension of 4 mm × 4 mm.  
JEDEC  
JEITA  
1-2V1B  
TOSHIBA  
Weight: 6.2 mg (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5 mA  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
11.4  
12.0  
12.7  
30  
V
Ω
Z
Z
Dynamic impedance  
Reverse current  
= 5 mA  
Z
Z
I
V
V
= 9 V  
0.05  
μA  
pF  
R
R
R
Total capacitance  
C
T
= 0 V, f = 1 MHz  
26  
1
2009-01-19  

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