Datasheet > DF3A3.6FE

DF3A3.6FE

更新时间： 2024-11-24 04:38:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	156K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DF3A3.6FE 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.72	配置：	COMMON ANODE, 2 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	130 Ω	JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e0	元件数量：	2
端子数量：	3	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	0.1 W	认证状态：	Not Qualified
标称参考电压：	3.6 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	最大电压容差：	5.56%
工作测试电流：	5 mA	Base Number Matches：	1

DF3A3.6FE 数据手册

DF3A3.6FE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A3.6FE

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit: mm

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

100

125

°C

Junction temperature

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-2SA1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0023 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

3.6

―

3.8

130

Ω

3.4

―

Dynamic impedance

Reverse current

= 1 V

―

μA

Terminal capacitance

(between Cathode and Anode)

= 0, f = 1 MHz

―

110

―

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

2007-11-01

12 3

中文翻译

下载PDF

与DF3A3.6FE相关器件

型号	品牌	获取价格	描述	数据表
DF3A3.6FU	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A3.6FU(TE85L)	TOSHIBA	获取价格	ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,3.6V V(Z),5.6%,SOT-323
DF3A3.6FU(TE85L,F)	TOSHIBA	获取价格	ZENER DIODE,DUAL, THREE TERMINAL, COMMON ANODE,3.6V V(Z),5.6%,SOT-323
DF3A3.6FU(TE85LF)	TOSHIBA	获取价格	Zener Diode
DF3A3.6FV	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF3A-3EP-2A	HRS	获取价格	2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard)
DF3A-3EP-2C	HRS	获取价格	2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard)
DF3A-3EP-2DS	HRS	获取价格	2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard)
DF3A-3EP-2DSA	HRS	获取价格	2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard)
DF3A-3EP-2H	HRS	获取价格	2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard)

与DF3A3.6FE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

DF3A3.6FE

DF3A3.6FE 技术参数

DF3A3.6FE 数据手册

与DF3A3.6FE相关器件

与DF3A3.6FE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DF3A3.6FE

DF3A3.6FE 技术参数

DF3A3.6FE 数据手册

与DF3A3.6FE相关器件

与DF3A3.6FE相关文章

您还可以找

您在本页遇到什么问题？