Datasheet > DF06

DF06

更新时间： 2024-01-05 10:51:48

品牌	Logo	应用领域
DIOTECH		/
页数	文件大小	规格书
2页	712K
描述
GLASS PASSIVATED BRIDGE RECTIFIERS

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技术参数
数据手册

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DF06 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.56
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PDSO-G4
最大非重复峰值正向电流：	50 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	1000 V
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

DF06 数据手册

DF005 THRU DF10

GLASS PASSIVATED BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

FEATURES

DF-M

●

Plastic package used has Underwriters

Laboratory Flammability Classification 94V-0

Glass passivated chip junction

.335(8.5)

.307(7.8)

●

.031(0.8)

.023(0.6)

.256(6.5)

.244(6.2)

High surge overload rating of 50 Amperes peak

High temperature soldering guaranteed:

260°C/10 seconds, at 5 lbs. (2.3kg) tension

.350(8.9)

.311(7.9)

.323(8.2)

.315(8.0)

MECHANICAL DATA

.079(2.0)

.059(1.5)

.102(2.6)

.089(2.2)

●

Case: Molded plastic body over passivated junctions

●

Terminals: Plated leads solderable per MIL-STD-750

Method 2026

.193(4.9)

.165(4.2)

.022(0.55)

.018(0.45)

.205(5.2)

.197(5.0)

●

Mounting Position: Any

Weight: 0.014 oz., 0.4 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

DF08

800

DF10

1000

700

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

DF04

400

280

400

1.0

SYMBOL

DF005

DF01

100

DF02

200

DF06

600

UNITS

RRM

RMS

420

560

140

200

100

600

800

1000

Maximum Average Forward Output Current at T

40^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum DC Forward Voltage Drop per Bridge

Element at 1.0A DC

FSM

1.1

Maximum Reverse Current at rated

10.0

= 25^oC

= 125^oC

µA

DC Blocking Voltage per element

500

I²t Rating for Fusing (t<8.3ms)

I²t

A²Sec

⁰C/W

Typical Junction Capacitance ( Note1)

Typical Thermal Resistance (Note 2)

RθJ A

STG

-55 to + 150

⁰C

Operating and Storage Temperature Range

NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts

2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.

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