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DF02M45-E3 PDF预览

DF02M45-E3

更新时间: 2024-12-01 19:19:07
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
2页 27K
描述
DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode

DF02M45-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFM
包装说明:R-PDIP-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDIP-T4JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

DF02M45-E3 数据手册

 浏览型号DF02M45-E3的Datasheet PDF文件第2页 
DF005M thru DF10M  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Glass Passivated  
Single-Phase Bridge Rectifiers  
Reverse Voltage 50 to 1000V  
Forward Current 1.0A  
Case Style DFM  
Features  
This series is UL listed under the Recognized  
Component Index, file number E54214  
Plastic package used has Underwriters Laboratory  
Flammability Classification 94V-0  
0.315 (8.00)  
0.255 (6.5)  
0.245 (6.2) 0.285 (7.24)  
Glass passivated chip junction  
High surge overload rating of 50 Amperes peak  
Ideal for printed circuit boards  
0.335 (8.51)  
0.320 (8.12)  
High temperature soldering guaranteed:  
260°C/10 seconds, at 5 lbs. (2.3kg) tension  
0.130 (3.3)  
0.120 (3.05)  
0.080 (2.03)  
0.050 (1.27)  
Mechanical Data  
0.045 (1.14)  
0.035 (0.89)  
Case: Molded plastic body over passivated junctions  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.013 (3.3)  
0.185 (4.69)  
0.150 (3.81)  
0.0086 (0.22)  
0.023 (0.58)  
0.018 (0.46)  
0.350 (8.9)  
0.300 (7.6)  
0.075 (1.90)  
0.055 (1.39)  
0.205 (5.2)  
0.195 (5.0)  
Polarity: Polarity symbols as marked on body  
Mounting Position: Any  
Weight: 0.014oz., 0.4g  
Packaging codes/options:  
45/50 ea. per Bulk Tube  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
DF  
DF  
DF  
DF  
DF  
DF  
DF  
Parameter  
Symbol 005M 01M 02M 04M 06M 08M 10M Unit  
Device Marking Code  
DF005 DF01 DF02 DF04 DF06 DF08 DF10  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Maximum DC blocking voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
A
100  
Max. average forward output rectified current at TA=40°C IF(AV)  
Peak forward surge current single sine-wave  
IFSM  
50  
10  
A
superimposed on rated load (JEDEC Method)  
Rating for fusing (t < 8.3ms)  
I2t  
A2sec  
°C/W  
°C  
Typical thermal resistance per leg (NOTE 1)  
RθJA  
RθJL  
40  
15  
Operating junction and storage temperature range  
T , T  
55 to +150  
J
STG  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
DF DF DF DF  
Symbol 005M 01M 02M 04M 06M 08M 10M Unit  
DF  
DF  
DF  
Parameter  
Maximum instantaneous forward voltage drop  
per leg at 1.0A  
VF  
1.1  
V
Maximum reverse current  
at rated DC blocking voltage per leg  
TA = 25°C  
TA = 125°C  
5.0  
500  
IR  
µA  
Typical junction capacitance per leg at 4.0V, 1MHz  
CJ  
25  
pF  
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads  
Document Number 88571  
07-Feb-02  
www.vishay.com  
1

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