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DEMD48-7 PDF预览

DEMD48-7

更新时间: 2024-10-05 19:51:15
品牌 Logo 应用领域
美台 - DIODES 光电二极管晶体管
页数 文件大小 规格书
4页 214K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, PLASTIC PACKAGE-6

DEMD48-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:1.75其他特性:BUILT IN BAIS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

DEMD48-7 数据手册

 浏览型号DEMD48-7的Datasheet PDF文件第2页浏览型号DEMD48-7的Datasheet PDF文件第3页浏览型号DEMD48-7的Datasheet PDF文件第4页 
DEMD48  
DUAL NPN/PNP PRE-BIASED TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Surface Mount Package Suited for Automated Assembly  
Simplifies Circuit Design and Reduces Board Space  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT-563  
Mechanical Data  
Case: SOT-563  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish Matte Tin Finish annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.005 grams (approximate)  
6
5
4
R2  
47k  
R1  
Q2  
R1  
Q1  
2.2k  
47k  
47k  
R2  
Reference  
Device Type  
NPN  
R1(Nom)  
47k  
R2(Nom)  
47kΩ  
1
2
3
Q1  
Q2  
PNP  
2.2 kΩ  
47kΩ  
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
300  
Unit  
mW  
Thermal Resistance, Junction to Ambient Air (Note 3)  
417  
°C/W  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Tj, TSTG  
Maximum Ratings, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
VIN  
Value  
50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
50  
V
10  
V
Emitter-Base Voltage  
Input Voltage  
-10 to +40  
100  
V
Output Current (DC)  
Peak Collector Current  
mA  
mA  
IO  
100  
ICM  
Maximum Ratings, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
VIN  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-50  
V
-10  
V
Emitter-Base Voltage  
Input Voltage  
-12 to +5  
-100  
V
Output Current (DC)  
Peak Collector Current  
mA  
mA  
IO  
-100  
ICM  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
DS31224 Rev. 4 - 2  
1 of 4  
www.diodes.com  
DEMD48  
© Diodes Incorporated  

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