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DDTD113ZC PDF预览

DDTD113ZC

更新时间: 2024-11-26 22:40:31
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 65K
描述
NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

DDTD113ZC 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.81其他特性:BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

DDTD113ZC 数据手册

 浏览型号DDTD113ZC的Datasheet PDF文件第2页浏览型号DDTD113ZC的Datasheet PDF文件第3页 
SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC  
DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC  
DDTD (xxxx) C  
NPN PRE-BIASED 500 mA SOT-23  
SURFACE MOUNT TRANSISTOR  
Features  
·
·
·
·
Epitaxial Planar Die Construction  
A
Complementary PNP Types Available (DDTB)  
SOT-23  
3
OUT  
Built-In Biasing Resistors, R1, R2  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.89  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.00  
0.61  
0.110  
8°  
Available in Lead Free/RoHS Compliant Version (Note 2)  
TOP VIEW  
B
C
B
IN  
E
1
GND  
2
D
G
Mechanical Data  
·
·
C
D
H
Case: SOT-23  
E
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
G
H
J
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 4, on Page 3  
L
M
·
Marking: Date Code and Marking Code  
(See Table Below & Page 3)  
a
OUT (3)  
R1  
All Dimensions in mm  
(2) IN  
·
·
Ordering Information (See Page 3)  
Weight: 0.008 grams (approximate)  
R2  
GND (1)  
P/N  
R1 (NOM) R2 (NOM) MARKING  
1K  
DDTD113EC  
DDTD123EC  
DDTD143EC  
DDTD114EC  
DDTD122JC  
DDTD113ZC  
DDTD123YC  
DDTD133HC  
DDTD123TC  
DDTD143TC  
DDTD114TC  
DDTD114GC  
1K  
2.2K  
4.7K  
10K  
N60  
N61  
N62  
N63  
N64  
N65  
N66  
N67  
N69  
N70  
N71  
N72  
2.2K  
4.7K  
10K  
0.22K  
1K  
4.7K  
10K  
10K  
10K  
OPEN  
OPEN  
OPEN  
10K  
2.2K  
3.3K  
2.2K  
4.7K  
10K  
0
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VCC  
Supply Voltage, (3) to (1)  
Input Voltage, (2) to (1)  
50  
V
DDTD113EC  
DDTD123EC  
DDTD143EC  
DDTD114EC  
DDTD122JC  
DDTD113ZC  
DDTD123YC  
DDTD133HC  
-10 to +10  
-10 to +12  
-10 to +30  
-10 to +40  
-5 to +5  
-5 to +10  
-5 to +12  
-6 to +20  
VIN  
V
Input Voltage, (1) to (2)  
DDTD123TC  
DDTD143TC  
DDTD114TC  
DDTD114GC  
VEBO (MAX)  
5
V
IC  
Pd  
Output Current  
All  
500  
200  
mA  
mW  
°C/W  
°C  
Power Dissipation  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
625  
-55 to +150  
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30384 Rev. 4 - 2  
1 of 3  
DDTD (xxxx) C  
www.diodes.com  
ã Diodes Incorporated  

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