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DDTC113TLP PDF预览

DDTC113TLP

更新时间： 2024-11-15 10:01:43
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 164K
描述
PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR

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DDTC113TLP 数据手册

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DDTC113TLP  
PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Ultra-Small Leadless Surface Mount Package  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
1
2
2
3
E
3
C
Qualified to AEC-Q101 Standards for High Reliability  
1
B
Mechanical Data  
Bottom View  
Top View  
•
•
Case: DFN1006-3  
Case Material: Molded Plastic. "Green Molding"  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: Collector Dot (See Diagram and  
Marking Information)  
Terminals: Finish - NiPdAu over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Code N4, Dot denotes Collector Side  
Ordering Information: See Page 3  
Weight: 0.0009 grams (approx.)  
DFN1006-3  
•
•
C
3
2
1
B
C
B
IN  
OUT  
•
1
1
3
E
E
GND  
2
•
•
•
Equivalent Inverter Circuit  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Supply Voltage  
Symbol  
VCC  
Value  
Unit  
V
50  
-5 to +10  
100  
Input Voltage  
V
VIN  
mA  
Output Current (IO)  
IC(max)  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3) @TA = 25  
Power Derating above 25°C  
Symbol  
PD  
Value  
250  
2
Unit  
mW  
Pder  
mW/°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25  
(Equivalent to one heated junction of NPN)  
Operating and Storage Temperature Range  
500  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
50  
50  
5
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 10μA, IE = 0  
IC = 1.0mA, IB = 0  
IE = 50μA, IC = 0  
VCB = 50V, IE = 0  
VEB = 4V, IC = 0  
V
0.5  
⎯
⎯
μA  
μA  
0.5  
IEBO  
ON CHARACTERISTICS (Note 4)  
DC Current Gain  
100  
⎯
0.7  
380  
⎯
1
600  
0.25  
1.3  
hFE  
VCE(SAT)  
R1  
⎯
V
VCE = 5V, IC = 1mA  
IC = 50mA, IB = 2.5mA  
⎯
Collector-Emitter Saturation Voltage  
Input Resistance  
KΩ  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
250  
MHz  
fT  
⎯
⎯
VCE = 10V, IE = 5mA, f = 100MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 3 or Diodes Inc. suggested pad layout document  
AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Short duration pulse test used to minimize self-heating effect.  
DS30843 Rev. 7 - 2  
1 of 3  
DDTC113TLP  
© Diodes Incorporated  
www.diodes.com  
123

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