WTE
POWER SEMICONDUCTORS
DD300/S – DD306/S
30A 8.4mm/9.5mm DISH DIODE
Features
!
Glass Passivated Die Construction
!
!
!
!
!
Low Leakage
Low Cost
High Surge Current Capability
Low Forward
C-Band Terminal Construction
C
D
Mechanical Data
B
!
Case: All Copper Case and Components
Hermetically Sealed
A
!
!
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case(Reverse Units Are
Available Upon Request and Are Designated
By An “R” Suffix, i.e. DD302R or DD304SR)
Polarity: Red Color Equals Standard,
Black Color Equals Reverse Polarity
Mounting Position: Any
8.4mm Dish
9.5mm Dish
Dim
A
Min
8.35
2.0
Max
Min
9.50
2.0
Max
8.45
2.16
1.47
—
9.72
2.16
1.47
—
!
!
B
C
1.43
22.3
1.43
22.3
D
All Dimensions in mm
“S” Suffix Designates 8.4mm Dish
No Suffix Designates 9.5mm Dish
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DD300/ DD301/ DD302/ DD303/ DD304/ DD305/ DD306/
Characteristic
Symbol
Unit
S
S
S
S
S
S
S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
300
400
500
600
V
RMS Reverse Voltage
VR(RMS)
IO
35
70
140
210
30
280
350
420
V
A
Average Rectified Output Current @TA = 150°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
400
1.1
A
Forward Voltage
@IF = 30A
VFM
IRM
Cj
V
Peak Reverse Current
@TA = 25°C
100
500
µA
pF
At Rated DC Blocking Voltage
@TA = 100°C
Typical Junction Capacitance (Note 1)
300
1.0
Typical Thermal Resistance Junction to Case
(Note 2)
RꢀJC
K/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
DD300/S – DD306/S
1 of 2
© 2002 Won-Top Electronics