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DD1200S33KL2C_B5 PDF预览

DD1200S33KL2C_B5

更新时间: 2024-01-08 20:41:19
品牌 Logo 应用领域
EUPEC 双极性晶体管
页数 文件大小 规格书
6页 188K
描述
IGBT-modules

DD1200S33KL2C_B5 技术参数

生命周期:Transferred包装说明:MODULE-4
Reach Compliance Code:unknown风险等级:5.81
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-XUFM-X4
元件数量:2相数:1
端子数量:4最大输出电流:1200 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:3300 V表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER

DD1200S33KL2C_B5 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
DD1200S33KL2C_B5  
Vorläufige Daten  
preliminary data  
Diode-Wechselrichter / diode-inverter  
chstzulässige Werte / maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
TÝÎ = -25°C  
3300  
Vçç¢  
3300  
V
A
Dauergleichstrom  
DC forward current  
IŒ  
IŒç¢  
I²t  
1200  
2400  
440  
Periodischer Spitzenstrom  
repetitive peak forward current  
t« = 1 ms  
A
Grenzlastintegral  
I²t - value  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
TÝÎ = 125°C  
kA²s  
kW  
µs  
Spitzenverlustleistung  
maximum power dissipation  
P笢  
tŒÓÒ ÑÍÒ  
1800  
10,0  
Mindesteinschaltdauer  
minimum turn-on time  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 1200 A, V•Š = 0 V  
IŒ = 1200 A, V•Š = 0 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,60 t.b.d.  
2,55  
V
V
VŒ  
Rückstromspitze  
peak reverse recovery current  
IŒ = 1200 A, - diŒ/dt = 5400 A/µs  
Vç = 1800 V  
V•Š = -15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
1400  
1600  
A
A
Iç¢  
Sperrverzögerungsladung  
recovered charge  
IŒ = 1200 A, - diŒ/dt = 5400 A/µs  
Vç = 1800 V  
V•Š = -15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
810  
1450  
µC  
µC  
QØ  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 1200 A, - diŒ/dt = 5400 A/µs  
Vç = 1800 V  
V•Š = -15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
750  
1500  
mJ  
mJ  
EØþÊ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode  
per diode  
RÚÌœ†  
RÚ̆™  
17,0 K/kW  
K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
16,0  
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Karl-Heinz Hoppe  
approved by: Thomas Schütze  
date of publication: 2004-4-8  
revision: 2.1  
1

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