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DCX100NS-7 PDF预览

DCX100NS-7

更新时间： 2024-11-16 02:52:23
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
7页 1055K
描述
100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

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DCX100NS-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.76其他特性：BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

DCX100NS-7 数据手册

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DCX100NS  
100mA DUAL COMPLEMENTARY PRE-BIASED  
TRANSISTORS  
Lead-free Green  
General Description  
·
DCX100NS is best suited for applications where the load  
needs to be turned on and off using control circuits like  
micro-controllers, comparators etc. particularly at a point of  
load. It features a discrete PNP pass transistor which can  
support continuous maximum current up to 100 mA. It also  
contains an NPN transistor which can be used as a control  
switch and also it can be biased using higher supply. The  
component devices can be used as part of a circuit or  
as stand alone discrete devices.  
4
5
6
3
2
1
Fig. 1: SOT-563  
Features  
·
·
·
·
·
Built in Biasing Resistors  
Epitaxial Planar Die Construction  
CQ1  
6
BQ2  
5
EQ2  
4
Lead Free By Design/ROHS Compliant (Note 1)  
"Green" Device (Note 2)  
Ideally Suited for Automated Assembly Processes  
10k  
R4  
Mechanical Data  
R3  
DDTA113ZE_DIE  
Q2  
R1  
1k  
10k  
·
Case: SOT-563  
Q1  
DDTC114EE_DIE  
·
Case Material: Molded Plastic. "Green Molding" Compound.  
UL Flammability Classification Rating 94V-0  
R2  
10k  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Fig. 2  
SOT563  
1
2
3
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
EQ1  
BQ1  
CQ2  
·
·
·
Marking & Type Code Information: See Page 5  
Ordering Information: See Page 5 and 6  
Weight: 0.005 grams (approximate)  
Fig. 2: Schematic and Pin Configuration  
Sub-Component P/N  
DDTA113ZE_DIE  
DDTC114EE_DIE  
Reference Device Type R1 (NOM)  
R2 (NOM)  
10KW  
¾
R3, R4 (NOM)  
Figure  
Q1  
Q2  
PNP  
NPN  
1KW  
¾
2
2
¾
10KW  
@ TA = 25°C unless otherwise specified  
Maximum Ratings: Total Device  
Characteristic  
Symbol  
Value  
150  
Unit  
Power Dissipation (Note 3)  
Pd  
mW  
R
Thermal Resistance, Junction to Ambient Air (Note 3)  
Operating and Storage Junction Temperature Range  
Collector Current (using PNP as Pass Transistor)  
833  
°C/W  
°C  
qJA  
Tj, Tstg  
IC(max)  
-55 to +150  
100  
mA  
@ TA = 25°C unless otherwise specified  
Sub-Component Device - Pre-Biased PNP Transistor  
Characteristic  
Symbol  
Vcc  
Value  
-50  
Unit  
Supply Voltage  
Input Voltage  
Output Current  
V
V
Vin  
+5 to -10  
-100  
Ic  
mA  
Notes: 1. No purposefully added lead.  
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on  
our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30761 Rev. 4 - 2  
1 of 7  
DCX100NS  
www.diodes.com  
ã Diodes Incorporated  
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