Datasheet > DCR06C

DCR06C

更新时间： 2024-02-23 19:37:57

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描述
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 600 Volts

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DCR06C 数据手册

DCR06C

THRU

DCR06F

DC COMPONENTS CO., LTD.

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

VOLTAGE RANGE - 300 to 600 Volts

CURRENT - 0.6 Ampere

Description

* Driven directly with IC and MOS device

* Feature proprietary, void-free glass passivated chips

* Available in voltage ratings from 300 to 600 volts

* Sensitive gate trigger current

* Designed for high volume, line-powered control

application in relay lamp drivers, small motor controls,

gate drivers for large thyristors

TO-92

.190(4.83)

.170(4.33)

Pinning

1 = Cathode, 2 = Gate, 3 = Anode

2oTyp

.190(4.83)

.170(4.33)

Absolute Maximum Ratings(TA=25oC)

.500

(12.70)

Min

Characteristic

Symbol

Rating

Unit

Peak Repetitive Off-State

Voltage

DCR06C

DCR06D

DCR06F

300

400

600

.022(0.56)

.014(0.36)

.022(0.56)

.014(0.36)

VDRM

.050

(1.27)

Typ

.100

Typ

(2.54)

On-State RMS Current

(TA=57oC, 180o Conduction Angles)

IT(RMS)

ITSM

0.6

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60Hz)

.148(3.76)

.132(3.36)

3 2 1

Forward Peak Gate Current

IGM

PGM

PG(AV)

0.1

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Operating Junction Temperature

Storage Temperature

.050

Typ

(1.27)

5oTyp

0.01

-40 to +110

-40 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Peak Repetitive Forward Off-State

Blocking Current

Symbol

Min

Typ

Max

100

1.7

200

0.8

5.0

Unit

Test Conditions

VAK=Rated VDRM

TJ=25oC

IDRM

µA

TJ=110oC

RGK=1KΩ

Peak Forward On-State Voltage

Continuous DC Gate Trigger Current

Continuous DC Gate Trigger Voltage

DC Holding Current

VTM

IGT

µA

ITM=0.6A Peak

VAK=7V DC, RL=100Ω

RGK=1KΩ

VGT

Critical Rate-of-Rise of Off-State Voltage

Gate Controlled Turn-on Time(tD+tR)

Thermal Resistance, Junction to Case

dv/dt

Tgt

5.0

2.2

V/µS RGK=1KΩ

µsec IGT=10mA

RθJC

oC/W

中文翻译

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