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DCF010

更新时间: 2024-11-20 22:29:23
品牌 Logo 应用领域
三洋 - SANYO 二极管开关
页数 文件大小 规格书
2页 52K
描述
Ultrahigh-Speed Switching Diode

DCF010 技术参数

生命周期:Transferred包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.45
其他特性:ULTRA HIGH SPEED SWITCHING配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.1 W
认证状态:Not Qualified最大重复峰值反向电压:85 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

DCF010 数据手册

 浏览型号DCF010的Datasheet PDF文件第2页 
Ordering number:EN2789B  
DCF010  
Silicon Epitaxial Planar Type (Anode Common)  
Ultrahigh-Speed Switching Diode  
Features  
Package Dimensions  
unit:mm  
· Ideally suited for use in hybrid ICs because of very  
small-sized package.  
1186A  
· Fast switching speed.  
· Small interterminal capacitance.  
[DCF010]  
1:Cathode1  
2:Cathode2  
3:Anode1, Anode2  
Specifications  
SANYO:MCP  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Peak Reverse Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
85  
80  
RM  
Reverse Voltage  
V
V
R
Peak Forward Current  
I
Unit rating  
Total rating  
Unit rationg  
Total tating  
Unit rating  
total rating  
300  
450  
100  
150  
4
mA  
mA  
mA  
mA  
A
FM  
Average Rectified Current  
Surge Current (1µs)  
I
O
I
FSM  
6
A
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
Tj  
100  
125  
mW  
˚C  
Tstg  
–55 to +125  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
0.61  
0.74  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Forward Voltage  
Reverse Current  
V
V
V
I
I =1mA  
F
I =10mA  
F
I =100mA  
F
V
V
F1  
F2  
F3  
1.20  
V
V
V
V
=30V  
0.1  
0.5  
4.0  
4.0  
µA  
µA  
pF  
ns  
R1  
R
R
R
I
=80V  
R2  
C
Interterminal Capacitance  
Reverse Recovery Time  
=0V, f=1MHz  
trr  
I =10mA, V =6V, R =50, Irr=0.1Irp  
F
R
L
Reverse Recovery Time Test Circuit  
Electrical Connection  
(Top view)  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2  

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