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DBI25-8 PDF预览

DBI25-8

更新时间: 2024-11-30 19:58:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 局域网二极管
页数 文件大小 规格书
2页 106K
描述
Bridge Rectifier Diode,

DBI25-8 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-MSFM-W5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 6 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-MSFM-W5
最大非重复峰值正向电流:385 A元件数量:6
相数:3端子数量:5
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:2 A封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:800 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
Base Number Matches:1

DBI25-8 数据手册

 浏览型号DBI25-8的Datasheet PDF文件第2页 
BI25-8 … BI25-14, DBI25-8 … DBI25-14  
BI25-8 … BI25-14, DBI25-8 … DBI25-14  
Single/Three-Phase Si-Bridge-Rectifiers  
Ein-/Dreiphasen-Si-Brückengleichrichter  
Version 2014-01-20  
Nominal current  
Nennstrom  
25 A  
560...900 V  
40±0.2  
10  
Ø 4.5  
Alternating input voltage  
Eingangswechselspannung  
Type  
Typ  
_
~
~
+
~
Metal case  
Metallgehäuse  
40 x 20 x 10 [mm]  
35 g  
Ø 0.8  
Weight approx. – Gewicht ca.  
Compound has classification UL94V-0  
Vergussmasse nach UL94V-0 klassifiziert  
4x7.5  
'BI' version without center lead  
'BI'-Version ohne mittleren Anschluss  
Standard packaging bulk  
Standard Lieferform lose im Karton  
Dimensions - Maße [mm]  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Type  
Max. alternating input voltage  
Max. Eingangswechselspannung  
VVRMS [V]  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 2)  
Typ 1)  
BI25-8  
1~  
3~  
1~  
3~  
1~  
3~  
560  
560  
800  
800  
900  
900  
800  
800  
DBI25-8  
BI25-12  
DBI25-12  
BI25-14  
DBI25-14  
1200  
1200  
1400  
1400  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
IFSM  
i2t  
100 A 3)  
350 A  
Peak forward surge current 50 Hz half sine-wave  
Stoßstrom für eine 50 Hz Sinus-Halbwelle  
Peak forward surge current 60 Hz half sine-wave  
Stoßstrom für eine 60 Hz Sinus-Halbwelle  
385 A  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
630 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
1
'BI' designates the single phase version, 'DBI' the three phase version  
'BI' bezeichnet die Einphasen-Version, 'DBI' die Dreiphasen-Version  
Valid per diode – Gültig pro Diode  
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case  
Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
2
3
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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