Datasheet > DB4M

DB4M

更新时间： 2024-09-25 09:59:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		数据判读及分析中心
页数	文件大小	规格书
2页	70K
描述
SILICON BIDIRECTIONAL DIACS

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中文翻译

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数据手册

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DB4M 数据手册

GALAXY ELECTRICAL

DB3M.DB4M

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

FEATURES

The three layer,two termnal,hermetically sealed diacs

are designed specifically for triggering thyristors.

They demonstrate low break over current at break

over voltage as they withstand peak pulse current,

The breakover symmetry is within three volts(DB6).

These diacs are intended for use in thyrisitors

phase control,circuits for lamp dimming,universal

motor speed control,and heat control.

MINI-MELF

Cathode indification

0.4 0.1

3.4 ^+0.3

-0.1

Dimensions in millimeters

ABSOLUTE RATINGS

Parameters

Symbols

DB3M,DB4M

UNITS

Power dissipation on printed

T_A=50^oC

150.0

2.0

Repetitive peak on-state

current

tp=20

f=120Hz

I_TRM

^oC

Operating junction temperature

Storage temperature

T_J

-40--- +125

T_STG

ELECTRICAL CHARACTERISTICS

Parameters

Test Conditions

DB3M

DB4M

UNITS

Min

Typ

Max

C=22nf(NOTE2)

See FIG.1

Breakover voltage (NOTE1)

V_BO

I+V_BOI-

I-V_BOI

C=22nf(NOTE2)

See FIG.1

±3.0

Breakover voltage symmetry

Max

Min

I=(I_BOto I_F=10mA)

See FIG.1

Dynamic breakover voltage (NOTE1)

Output voltage (NOTE1)

I± VI

5.0

See FIG.2

V_o

I_BO

t_r

Min

Max

Typ

Max

C=22nf(NOTE2)

See FIG.3

100.0

1.5

Breakover current (NOTE1)

Rise time (NOTE1)

V_R=0.5 V_BO

See FIG.1

10.0

Leakage current (NOTE1)

I_R

www.galaxycn.com

NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.

2. Connected in parallel w ith the devices

Document Number 0283006

BLGALAXY ELECTRICAL

中文翻译

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