Datasheet > DB4S

DB4S

更新时间： 2024-04-09 18:58:45

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		数据判读及分析中心
页数	文件大小	规格书
2页	243K
描述
Axial Lead DIAC

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DB4S 数据手册

GALAXY ELECTRICAL

DB3S.DB4S

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

FEATURES

The three layer,two termnal,axial lead,hermetically

1111sealed diacs are designed specificallyfor triggering

1111thyristors.They demonstrate low breakover current at

1111breakover voltage as theywithstand peak pulse

1111current,The breakover symmetry is within three

1111volts(DB3S,DB4S). These diacs are intended for

use in thyrisitors phase control,circuits for lamp

R-1

dimming,universal motor speed control,and heat

control.

Dimensions in millimeters

ABSOLUTE RATINGS

Parameters

Symbols

DB3S,DB4S

UNITS

Power dissipation on printed

T_A=50^oC circuit (L=10mm)

150.0

2.0

Repetitive peak on-state

current

tp=20

f=120Hz

I_TRM

^oC

Operating junction temperature

Storage temperature

T_J

-40--- +125

T_STG

ELECTRICAL CHARACTERISTICS

Parameters

Test Conditions

DB3S

DB4S

UNITS

Min

Typ

Max

C=22nf(NOTE2)

Breakover voltage (NOTE1)

V_BO

See FIG.1

I+V_BOI-

I-V_BOI

C=22nf(NOTE2)

See FIG.1

Breakover voltage symmetry

Max

Min

±3.0

I=(I_BOto I_F=10mA)

See FIG.1

Dynamic breakover voltage (NOTE1)

Output voltage (NOTE1)

I± VI

5.0

See FIG.2

V_o

I_BO

t_r

Min

Max

Typ

Max

C=22nf(NOTE2)

See FIG.3

100.0

1.5

Breakover current (NOTE1)

Rise time (NOTE1)

V_R=0.5 V_BO

See FIG.1

10.0

Leakage current (NOTE1)

I_R

www.galaxycn.com

NOTE: *Electrical characteristics applicable in both forw ard and reverse dirctions.

**Connected in parallel w ith the devices

Document Number 0283001A

BLGALAXY ELECTRICAL

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