Datasheet > DB3-DO-35

DB3-DO-35

更新时间： 2024-11-22 01:26:11

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	1697K
描述
DO-35 Glass-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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DB3-DO-35 数据手册

DB3

DO-35 Glass-Encapsulate Diodes

Small Signal Fast Switching Diodes

Features

DO-35

●VBO 28V-36V

Symbols

Parameters

Value

Units

Power Disspation on printed

Circuit(L=10mm)

TA=50℃

150

tp=10us

f=100Hz

ITRM

TSTG/TJ

Repetitive Peak on-state Current

2.0

Storage and Operating Junction Temperature

-40 to+125

℃

Electrical Characteristics (T =25℃ Unless otherwise specified）

Value

Symbols

Parameters

Test Condition

Units

Min

Typ

C=22Nf(Note2)

See diagram1

VBO

Break Voltage(Note 2)

Max

I+VBOI-

I-VBOI

C=22Nf(Note2)

See diagram1

△I=(IBO to IF=10Ma)

See diagram1

Breakover Voltage Symmetry

Min

I±△VI

Dynamic Breakover Voltage(Note1)

IBO

Output Voltage (Note1)

Breakover Current (Note1)

Rise Time(Note1)

See diagram2

C=22Nf(Note2)

See diagram3

Min

Max

Typ

100

1.5

VB=0.5 VBO max

See diagram1

Leakage Current(Note1)

Max

igh Diode Semiconductor

12 3 4

中文翻译

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