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DB2631100L PDF预览

DB2631100L

更新时间: 2024-02-08 07:48:04
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
4页 456K
描述
Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, ML2-N3-B, 2 PIN

DB2631100L 技术参数

生命周期:Transferred包装说明:R-XBCC-N2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.75配置:SINGLE
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCYJESD-30 代码:R-XBCC-N2
元件数量:1端子数量:2
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DB2631100L 数据手册

 浏览型号DB2631100L的Datasheet PDF文件第2页浏览型号DB2631100L的Datasheet PDF文件第3页浏览型号DB2631100L的Datasheet PDF文件第4页 
DB26311  
Silicon epitaxial planar type  
Unit: mm  
For high speed switching circuits  
DB2S311 in ML2 type package  
Features  
Short reverse recovery time trr  
Small reverse current IR  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: B9  
Packaging  
DB2631100L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
1: Cathode  
2:Anode  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
Reverse voltage  
30  
30  
Panasonic  
ML2-N3-B  
Repetitive peak reverse voltage  
Forward current (Average)  
Peak forward current  
VRRM  
IF(AV)  
IFM  
V
JEITA  
Code  
SOD-882  
200  
mA  
mA  
A
300  
1
Non-repetitive peak forwardsurgecurrent*  
IFSM  
Tj  
1
Junction temperature  
125  
°C  
°C  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +125  
T
stg  
Note) 1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
0.56  
0.5  
5
Unit  
Forward voltage  
IF = 200 mA  
VR = 10 V  
VR = 30 V  
V
IR1  
Reverse current  
µA  
IR2  
Terminal capacitance  
Reverse recovery time *  
Ct  
VR = 10 V, f = 1 MHz  
6.0  
2.2  
pF  
ns  
1
trr  
IF = IR = 100 mA, Irr = 10 mA  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 250 MHz  
1: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
Publication date: April 2013  
Ver. CED  
1

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