Datasheet > DB153STR

DB153STR

更新时间： 2024-02-17 00:14:08

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描述
BRIDGE RECT 1P 200V 1.5A DB-S

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DB153STR 数据手册

DB151S THRU DB157S

Technical Data

Data Sheet N1476, Rev. C

DB151S THRU DB157S SINGLE-PHASE

GLASS PASSIVATED SILICON BRIDGE RECTIFIERS

Features



Glass passivated die construction

Low forward voltage drop

High current capability

High surge current capability

Designed for surface mount application

Plastic material-UL flammability 94V-0

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

DB-S

Circuit Diagram

Mechanical Data



Case: DB-S, molded plastic



Terminals: plated leads solderable per MIL-STD-202,

Method 208



Polarity: as marked on case

Mounting position: Any

Lead Free: For RoHS / Lead Free Version,

Maximum Ratings @T_A=25°C unless otherwise specified

Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.

151S

152S

153S

154S

155S

156S

157S

Symbol

Units

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V_RMS

I_F(AV)

280

1.5

Average Forward Output Current

(Note 1) @ T_C=100°C

Non-Repetitive Peak Forward Surge

Current 8.3ms Single half sine-wave

superimposed on rated load (JEDEC

Method)

I_FSM

I²t Rating for Fusing (t < 8.3ms)

I²t

A²s

12.6

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

12 3 4 5

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