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DB102S PDF预览

DB102S

更新时间: 2024-01-19 14:21:21
品牌 Logo 应用领域
虹扬 - HY 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 89K
描述
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS

DB102S 技术参数

生命周期:Obsolete包装说明:R-PDIP-W4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.57
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDIP-W4
元件数量:4相数:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:DUAL
Base Number Matches:1

DB102S 数据手册

 浏览型号DB102S的Datasheet PDF文件第2页 
DB101S thru DB107S  
SURFACE MOUNT  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 1.0 Ampere  
.
DBS  
FEATURES  
Rating to 1000V PRV  
.047(1.2)  
.037(0.95)  
Ideal for printed circuit board  
.335(8.5)  
.307(7.8)  
Low forward voltage drop,high current capability  
Reliable low cost construction utilizing molded plastic  
-
~
+
~
technique results in inexpensive product  
.256(6.5)  
.244(6.2)  
The plastic material has UL flammability  
classification 94V-0  
.406(10.3)  
.391(10.0)  
.140(0.35)  
.008(0.2)  
.346(8.8)  
.323(8.2)  
.134(3.4)  
.124(3.15)  
MECHANICAL DATA  
Polarit:As marked on Body  
Weight:0.02 ounces,0.38 grams  
Mounting position:Any  
.063(1.6)  
.055(1.4)  
.205(5.2)  
.197(5.0)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward  
I(AV)  
1.0  
A
Rectified Current  
@TA=40℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
IFSM  
30  
A
1.1  
Maximum Forward Voltage at 1.0A DC  
VF  
IR  
V
10  
Maximum DC Reverse Current  
at Rated DC Bolcking Voltage  
@TJ=25℃  
@TJ=125℃  
μA  
500  
I2t Rating for Fusing (t<8.3ms)  
I2t  
CJ  
A2s  
pF  
10.4  
25  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
RθJA  
TJ  
/W  
40  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Thermal resistance from junction to ambient mounted on P.C.B.  
with 0.5*0.5"(13*13mm) copper pads.  
~ 380 ~  

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